TY - GEN
T1 - High power narrow far-field broad-stripe semiconductor lasers with second-order metal grating feedback
AU - Chen, Yong Yi
AU - Qin, Li
AU - Jia, Peng
AU - Ning, Yong Qiang
AU - Liu, Yun
AU - Wang, Li Jun
AU - Zhang, Jin Long
PY - 2012
Y1 - 2012
N2 - In order to obtain high power semiconductor lasers with narrow far-field and improve the characteristics of the output beam, a broad-stripe distributed feedback semiconductor laser with second-order metal surface gratings emitting around 940 nm is fabricated, based on the holographic photolithography and wet etching technology. The second-order metal gratings are located at the metal/semiconductor interface in the p-Al0.2GaIn0.49P cladding layer, with 960 μm×142 μm grating area, and the metal gratings also act as ohmic contact of the p side. The grating period is 287nm, the grating depth is 120 nm, and the grating duty cycle is 0.5. For the laser with second-order metal gratings, the powers is 718 mW, spectral linewidth (FWHM) is less than 0.1 nm, lateral far field angle (FWHM) is 2.7? and the vertical far-field angle (FWHM) is 16.7 in the current of 1.5 A. For the laser without gratings in the current of 1.5 A, the spectral linewidth is 1.3 nm, the lateral far-field angle is 7.3? and the vertical far-field angle is 36?, both worse than lasers with second-order metal surface gratings.
AB - In order to obtain high power semiconductor lasers with narrow far-field and improve the characteristics of the output beam, a broad-stripe distributed feedback semiconductor laser with second-order metal surface gratings emitting around 940 nm is fabricated, based on the holographic photolithography and wet etching technology. The second-order metal gratings are located at the metal/semiconductor interface in the p-Al0.2GaIn0.49P cladding layer, with 960 μm×142 μm grating area, and the metal gratings also act as ohmic contact of the p side. The grating period is 287nm, the grating depth is 120 nm, and the grating duty cycle is 0.5. For the laser with second-order metal gratings, the powers is 718 mW, spectral linewidth (FWHM) is less than 0.1 nm, lateral far field angle (FWHM) is 2.7? and the vertical far-field angle (FWHM) is 16.7 in the current of 1.5 A. For the laser without gratings in the current of 1.5 A, the spectral linewidth is 1.3 nm, the lateral far-field angle is 7.3? and the vertical far-field angle is 36?, both worse than lasers with second-order metal surface gratings.
KW - Broad-stripe DFB laser
KW - High power
KW - Metal surface grating
KW - Second-order grating
UR - https://www.scopus.com/pages/publications/84880232405
U2 - 10.1117/12.999392
DO - 10.1117/12.999392
M3 - Conference contribution
AN - SCOPUS:84880232405
SN - 9780819493071
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Semiconductor Lasers and Applications V
T2 - Semiconductor Lasers and Applications V
Y2 - 5 November 2012 through 6 November 2012
ER -