High-power large-aperture bottom-emitting 980-nm VCSELs with integrated GaAs microlens

Zhenfu Wang; Yongqiang Ning; Te Li; Jinjiang Cui; Yan Zhang; Guangyu Liu; Xing Zhang; Li Qin; Yun Liu; Lijun Wang

doi:10.1109/LPT.2008.2010510

High-power large-aperture bottom-emitting 980-nm VCSELs with integrated GaAs microlens

Zhenfu Wang
, Yongqiang Ning
, Te Li
, Jinjiang Cui
, Yan Zhang
, Guangyu Liu
, Xing Zhang
, Li Qin
, Yun Liu
, Lijun Wang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Microlens-integrated bottom-emitting 980-nm vertical-cavity surface-emitting lasers (VCSELs) with an emitting window aperture of 400 μm have been fabricated. A novel material structure with nine InGaAs-GaAsP quantum wells and slightly decreased reflectivity of n-type distributed Bragg reflectors (n-DBRs) are employed to increase the output power. A convex microlens is fabricated by a one-step diffusion-limited wet-etching technique on the GaAs substrate. The diameter of the active layer is about 200 μm after lateral oxidation, and the nominal diameter of the microlens is 400 μm. The maximum output power is 200 mW at continuous-wave operation at room temperature. The far-field divergence angles θ_∥ and θ _⊥of the single device at a current of 4A are 8.7° and 8.4°, respectively. The optical beam performance between the microlens-integrated VCSEL and ordinary VCSEL is compared.

Original language	English
Pages (from-to)	239-241
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2008.2010510
State	Published - Feb 15 2009
Externally published	Yes

Funding

Manuscript received October 16, 2008; revised November 19, 2008. First published January 06, 2009; current version published February 04, 2009. This work is supported by the National Natural Science Foundation of China under Grant No. 60636020, 60676034, 60476029, 60577003, 60876036 and 60706007.

Keywords

Full-width at half-maximum (FWHM)
Microlens
Power
Vertical-cavity surface-emitting lasers (VCSELs)

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10.1109/LPT.2008.2010510

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title = "High-power large-aperture bottom-emitting 980-nm VCSELs with integrated GaAs microlens",

abstract = "Microlens-integrated bottom-emitting 980-nm vertical-cavity surface-emitting lasers (VCSELs) with an emitting window aperture of 400 μm have been fabricated. A novel material structure with nine InGaAs-GaAsP quantum wells and slightly decreased reflectivity of n-type distributed Bragg reflectors (n-DBRs) are employed to increase the output power. A convex microlens is fabricated by a one-step diffusion-limited wet-etching technique on the GaAs substrate. The diameter of the active layer is about 200 μm after lateral oxidation, and the nominal diameter of the microlens is 400 μm. The maximum output power is 200 mW at continuous-wave operation at room temperature. The far-field divergence angles θ∥ and θ ⊥of the single device at a current of 4A are 8.7° and 8.4°, respectively. The optical beam performance between the microlens-integrated VCSEL and ordinary VCSEL is compared.",

keywords = "Full-width at half-maximum (FWHM), Microlens, Power, Vertical-cavity surface-emitting lasers (VCSELs)",

author = "Zhenfu Wang and Yongqiang Ning and Te Li and Jinjiang Cui and Yan Zhang and Guangyu Liu and Xing Zhang and Li Qin and Yun Liu and Lijun Wang",

year = "2009",

month = feb,

day = "15",

doi = "10.1109/LPT.2008.2010510",

language = "English",

volume = "21",

pages = "239--241",

journal = "IEEE Photonics Technology Letters",

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T1 - High-power large-aperture bottom-emitting 980-nm VCSELs with integrated GaAs microlens

AU - Wang, Zhenfu

AU - Ning, Yongqiang

AU - Li, Te

AU - Cui, Jinjiang

AU - Zhang, Yan

AU - Liu, Guangyu

AU - Zhang, Xing

AU - Qin, Li

AU - Liu, Yun

AU - Wang, Lijun

PY - 2009/2/15

Y1 - 2009/2/15

N2 - Microlens-integrated bottom-emitting 980-nm vertical-cavity surface-emitting lasers (VCSELs) with an emitting window aperture of 400 μm have been fabricated. A novel material structure with nine InGaAs-GaAsP quantum wells and slightly decreased reflectivity of n-type distributed Bragg reflectors (n-DBRs) are employed to increase the output power. A convex microlens is fabricated by a one-step diffusion-limited wet-etching technique on the GaAs substrate. The diameter of the active layer is about 200 μm after lateral oxidation, and the nominal diameter of the microlens is 400 μm. The maximum output power is 200 mW at continuous-wave operation at room temperature. The far-field divergence angles θ∥ and θ ⊥of the single device at a current of 4A are 8.7° and 8.4°, respectively. The optical beam performance between the microlens-integrated VCSEL and ordinary VCSEL is compared.

AB - Microlens-integrated bottom-emitting 980-nm vertical-cavity surface-emitting lasers (VCSELs) with an emitting window aperture of 400 μm have been fabricated. A novel material structure with nine InGaAs-GaAsP quantum wells and slightly decreased reflectivity of n-type distributed Bragg reflectors (n-DBRs) are employed to increase the output power. A convex microlens is fabricated by a one-step diffusion-limited wet-etching technique on the GaAs substrate. The diameter of the active layer is about 200 μm after lateral oxidation, and the nominal diameter of the microlens is 400 μm. The maximum output power is 200 mW at continuous-wave operation at room temperature. The far-field divergence angles θ∥ and θ ⊥of the single device at a current of 4A are 8.7° and 8.4°, respectively. The optical beam performance between the microlens-integrated VCSEL and ordinary VCSEL is compared.

KW - Full-width at half-maximum (FWHM)

KW - Microlens

KW - Power

KW - Vertical-cavity surface-emitting lasers (VCSELs)

UR - https://www.scopus.com/pages/publications/77951190935

U2 - 10.1109/LPT.2008.2010510

DO - 10.1109/LPT.2008.2010510

M3 - Article

AN - SCOPUS:77951190935

SN - 1041-1135

VL - 21

SP - 239

EP - 241

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

ER -

High-power large-aperture bottom-emitting 980-nm VCSELs with integrated GaAs microlens

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Keywords

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