High-power InGaAs VCSEL's single devices and 2-D arrays

Te Li; Yongqiang Ning; Yanfang Sun; Li Qin; Changling Yan; Yun Liu; Lijun Wang

doi:10.1117/12.635658

High-power InGaAs VCSEL's single devices and 2-D arrays

Te Li
, Yongqiang Ning
, Yanfang Sun
, Li Qin
, Changling Yan
, Yun Liu
, Lijun Wang

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm². A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21 W at room temperature, resulting in a average optical power density of 1KW/cm². The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.

Original language	English
Article number	602002
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6020
DOIs	https://doi.org/10.1117/12.635658
State	Published - 2005
Externally published	Yes
Event	Optoelectronic Materials and Devices for Optical Communications - Shanghai, China Duration: Nov 7 2005 → Nov 10 2005

Funding

This work is supported by the Innovative Program of Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences and by the National Science foundations under contract numbers of 60476029 and 60306004, and also by Jilin Provincial Foundation under contract number of 20050318.

Keywords

2-D arrays
980 nm
High power
Quantum well
VCSEL's

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10.1117/12.635658

Cite this

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title = "High-power InGaAs VCSEL's single devices and 2-D arrays",

abstract = "We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21 W at room temperature, resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.",

keywords = "2-D arrays, 980 nm, High power, Quantum well, VCSEL's",

author = "Te Li and Yongqiang Ning and Yanfang Sun and Li Qin and Changling Yan and Yun Liu and Lijun Wang",

year = "2005",

doi = "10.1117/12.635658",

language = "English",

volume = "6020",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Optoelectronic Materials and Devices for Optical Communications ; Conference date: 07-11-2005 Through 10-11-2005",

}

TY - JOUR

T1 - High-power InGaAs VCSEL's single devices and 2-D arrays

AU - Li, Te

AU - Ning, Yongqiang

AU - Sun, Yanfang

AU - Qin, Li

AU - Yan, Changling

AU - Liu, Yun

AU - Wang, Lijun

PY - 2005

Y1 - 2005

N2 - We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21 W at room temperature, resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.

AB - We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21 W at room temperature, resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.

KW - 2-D arrays

KW - 980 nm

KW - High power

KW - Quantum well

KW - VCSEL's

UR - https://www.scopus.com/pages/publications/33644979331

U2 - 10.1117/12.635658

DO - 10.1117/12.635658

M3 - Conference article

AN - SCOPUS:33644979331

SN - 0277-786X

VL - 6020

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 602002

T2 - Optoelectronic Materials and Devices for Optical Communications

Y2 - 7 November 2005 through 10 November 2005

ER -

High-power InGaAs VCSEL's single devices and 2-D arrays

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Keywords

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