High power high duty-cycle 808 nm wavelength laser diode

808 nm high duty-cycle high power semiconductor laser array was studied. Gradient refraction index separate confinement hetero-structure single quantum well broad waveguide structure(GRIN-SCH-SQW-BW) was adopted to reduce the non-radiation compound, the active layer carrier leakage, and the scattering and absorption loss. Meanwhile, it enables high doping of the P side and optimization of N side alloy conditions, which reduce the laser diode series resistance, thereby reduce the joule heat and raise the output power of the laser diode. GaInAsP/InGaP/AlGaAs GRIN-SCH-SQW-BW epilayers were grown by low pressure metal organic chemical vapor deposition(MOCVD) on N-type GaAs substrate. laser diode array was fabricated using the material. The output power of laser diode array is up to 189.64 W at 180 A and 20% duty cycle, the slope efficiency is as high as 1.1 W/A, the central wavelength is 805.0 nm and the highest wall plug efficiency is 55.4%; the output power of laser diode array is up to 324.9 W at 300 A and 1% duty cycle, the slope efficiency is as high as 1.11 W/A, the central wavelength is 804.5 nm and the highest wall plug efficiency is 55.6%.