High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots

Yinli Zhou; Jian Zhang; Yongqiang Ning; Yugang Zeng; Jianwei Zhang; Xing Zhang; Li Qin; Cunzhu Tong; Yun Liu; Lijun Wang

doi:10.1364/OE.24.029321

High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots

Yinli Zhou, Jian Zhang, Yongqiang Ning, Yugang Zeng, Jianwei Zhang, Xing Zhang, Li Qin, Cunzhu Tong, Yun Liu, Lijun Wang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, we demonstrate high power, dual-wavelength (dual-λ) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-λ lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-λ operation only using Fabry-Pérot (FP) cavity, which is significant for compact size and low fabrication cost.

Original language	English
Pages (from-to)	29321-29328
Number of pages	8
Journal	Optics Express
Volume	24
Issue number	25
DOIs	https://doi.org/10.1364/OE.24.029321
State	Published - Dec 12 2016
Externally published	Yes

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title = "High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots",

abstract = "In this paper, we demonstrate high power, dual-wavelength (dual-λ) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-λ lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-λ operation only using Fabry-P{\'e}rot (FP) cavity, which is significant for compact size and low fabrication cost.",

author = "Yinli Zhou and Jian Zhang and Yongqiang Ning and Yugang Zeng and Jianwei Zhang and Xing Zhang and Li Qin and Cunzhu Tong and Yun Liu and Lijun Wang",

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doi = "10.1364/OE.24.029321",

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T1 - High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots

AU - Zhou, Yinli

AU - Zhang, Jian

AU - Ning, Yongqiang

AU - Zeng, Yugang

AU - Zhang, Jianwei

AU - Zhang, Xing

AU - Qin, Li

AU - Tong, Cunzhu

AU - Liu, Yun

AU - Wang, Lijun

PY - 2016/12/12

Y1 - 2016/12/12

N2 - In this paper, we demonstrate high power, dual-wavelength (dual-λ) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-λ lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-λ operation only using Fabry-Pérot (FP) cavity, which is significant for compact size and low fabrication cost.

AB - In this paper, we demonstrate high power, dual-wavelength (dual-λ) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-λ lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-λ operation only using Fabry-Pérot (FP) cavity, which is significant for compact size and low fabrication cost.

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High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots

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