Abstract
We report on the lasing characteristics of a two-dimensional (2D) vertical-cavity surface-emitting laser (VCSEL) array with three In 0.2GaAs/GaAs0.92P QWs emitting at 977 nm. The contribution of a large-bandgap barrier material, GaAsP, to improve the output power was investigated. More than 123W of pulsed peak power at 110 A was achieved, corresponding to 24.6 kW/cm2 of power density and 1.11 W/A of slope efficiency. The thermal effect dependence of the characteristics of the array was illustrated. Moreover, the device performance was estimated by a functional method using a p-parameter.
| Original language | English |
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| Journal | Applied Physics Express |
| Volume | 4 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2011 |
| Externally published | Yes |