High-photoresponsivity heterojunction based on MoTe2/2D electron gas at the LaAlO3/SrTiO3 interface

Xiaowei Zhou; Bocheng Li; Xiaochen Tian; Yucheng Jiang; Run Zhao; Meng Zhao; Ju Gao; Jie Xing; Jie Qiu; Guozhen Liu

doi:10.1088/1361-6463/acc53d

High-photoresponsivity heterojunction based on MoTe₂/2D electron gas at the LaAlO₃/SrTiO₃ interface

Xiaowei Zhou, Bocheng Li, Xiaochen Tian, Yucheng Jiang, Run Zhao, Meng Zhao, Ju Gao, Jie Xing, Jie Qiu, Guozhen Liu

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are ideal elements for many optoelectronic devices owing to their outstanding optoelectrical performance under visible and infrared light. Heterostructures composed of TMDs and other non-TMD materials may exhibit rich properties. In this study, a high-performance heterojunction based on 2D MoTe₂ and 2D electron gas (2DEG) at the LaAlO₃/SrTiO₃ interface was fabricated. The device exhibits good current rectification properties with a high rectification ratio exceeding 10³ and a low leakage current (∼1 nA at −6 V bias). Moreover, a high photoresponsivity of ∼800 A W⁻¹ and a large specific detectivity of 4 × 10¹² Jones at 405 nm were also obtained at room temperature. Heterostructures based on 2D TMDs and oxide 2DEG are expected to become essential elements in multifunctional microdevices and optoelectronic devices.

Original language	English
Article number	205304
Journal	Journal of Physics D: Applied Physics
Volume	56
Issue number	20
DOIs	https://doi.org/10.1088/1361-6463/acc53d
State	Published - May 18 2023
Externally published	Yes

Funding

This work was supported by the National Natural Science Foundation of China (Grant Nos. 12074282, 11974304, and 11974318). This work was also supported by the Postgraduate Research and Practice Innovation Program of Jiangsu Province (No. KYCX21_3005), and Jiangsu Key Disciplines of the Fourteenth Five-Year Plan (2021135).

Funders	Funder number
Jiangsu Key Disciplines of the Fourteenth Five-Year Plan
Postgraduate Research and Practice Innovation Program of Jiangsu Province	KYCX21_3005
National Natural Science Foundation of China	12074282, 11974318, 11974304

Keywords

2DEG
LaAlO/SrTiO
MoTe
heterojunction
photoresponsivity

Access to Document

10.1088/1361-6463/acc53d

Cite this

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title = "High-photoresponsivity heterojunction based on MoTe2/2D electron gas at the LaAlO3/SrTiO3 interface",

abstract = "Two-dimensional (2D) transition metal dichalcogenides (TMDs) are ideal elements for many optoelectronic devices owing to their outstanding optoelectrical performance under visible and infrared light. Heterostructures composed of TMDs and other non-TMD materials may exhibit rich properties. In this study, a high-performance heterojunction based on 2D MoTe2 and 2D electron gas (2DEG) at the LaAlO3/SrTiO3 interface was fabricated. The device exhibits good current rectification properties with a high rectification ratio exceeding 103 and a low leakage current (∼1 nA at −6 V bias). Moreover, a high photoresponsivity of ∼800 A W−1 and a large specific detectivity of 4 × 1012 Jones at 405 nm were also obtained at room temperature. Heterostructures based on 2D TMDs and oxide 2DEG are expected to become essential elements in multifunctional microdevices and optoelectronic devices.",

keywords = "2DEG, LaAlO/SrTiO, MoTe, heterojunction, photoresponsivity",

author = "Xiaowei Zhou and Bocheng Li and Xiaochen Tian and Yucheng Jiang and Run Zhao and Meng Zhao and Ju Gao and Jie Xing and Jie Qiu and Guozhen Liu",

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doi = "10.1088/1361-6463/acc53d",

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T1 - High-photoresponsivity heterojunction based on MoTe2/2D electron gas at the LaAlO3/SrTiO3 interface

AU - Zhou, Xiaowei

AU - Li, Bocheng

AU - Tian, Xiaochen

AU - Jiang, Yucheng

AU - Zhao, Run

AU - Zhao, Meng

AU - Gao, Ju

AU - Xing, Jie

AU - Qiu, Jie

AU - Liu, Guozhen

PY - 2023/5/18

Y1 - 2023/5/18

N2 - Two-dimensional (2D) transition metal dichalcogenides (TMDs) are ideal elements for many optoelectronic devices owing to their outstanding optoelectrical performance under visible and infrared light. Heterostructures composed of TMDs and other non-TMD materials may exhibit rich properties. In this study, a high-performance heterojunction based on 2D MoTe2 and 2D electron gas (2DEG) at the LaAlO3/SrTiO3 interface was fabricated. The device exhibits good current rectification properties with a high rectification ratio exceeding 103 and a low leakage current (∼1 nA at −6 V bias). Moreover, a high photoresponsivity of ∼800 A W−1 and a large specific detectivity of 4 × 1012 Jones at 405 nm were also obtained at room temperature. Heterostructures based on 2D TMDs and oxide 2DEG are expected to become essential elements in multifunctional microdevices and optoelectronic devices.

AB - Two-dimensional (2D) transition metal dichalcogenides (TMDs) are ideal elements for many optoelectronic devices owing to their outstanding optoelectrical performance under visible and infrared light. Heterostructures composed of TMDs and other non-TMD materials may exhibit rich properties. In this study, a high-performance heterojunction based on 2D MoTe2 and 2D electron gas (2DEG) at the LaAlO3/SrTiO3 interface was fabricated. The device exhibits good current rectification properties with a high rectification ratio exceeding 103 and a low leakage current (∼1 nA at −6 V bias). Moreover, a high photoresponsivity of ∼800 A W−1 and a large specific detectivity of 4 × 1012 Jones at 405 nm were also obtained at room temperature. Heterostructures based on 2D TMDs and oxide 2DEG are expected to become essential elements in multifunctional microdevices and optoelectronic devices.

KW - 2DEG

KW - LaAlO/SrTiO

KW - MoTe

KW - heterojunction

KW - photoresponsivity

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