High performance two H-bridge in cascaded gradient driver design with SiC power MOSFET

Ruxi Wang, Juan Sabate, Eladio Delgado, Fengfeng Tao, Xiaohu Liu, Brian Rowden

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

In this paper, a detailed high efficiency two H-bridge in cascaded gradient driver design with 1700V SiC MOSFET is presented. Both module and system level stray inductance are minimized to better utilize the SiC high switching speed capability. The amplifier loss is calculated in simulation with device loss model and also verified in hardware experiment. The efficiency of the amplifier is higher than 99%. Higher output ripple frequency (up to 125 kHz) provides the opportunity to design a high density output filter without magnetic components. A novel ripple current cancellation circuit (RCCC) with embedded coolant pipe is also presented and demonstrated.

Original languageEnglish
Title of host publication2015 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9789075815221
DOIs
StatePublished - Oct 27 2015
Externally publishedYes
Event17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Geneva, Switzerland
Duration: Sep 8 2015Sep 10 2015

Publication series

Name2015 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015

Conference

Conference17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
Country/TerritorySwitzerland
CityGeneva
Period09/8/1509/10/15

Keywords

  • Efficiency
  • High frequency power converter
  • High power density systems
  • MOSFET
  • Silicon Carbide (SiC)

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