TY - GEN
T1 - High performance SiC MOSFET module for industrial applications
AU - Stevanovic, Ljubisa
AU - Rowden, Brian
AU - Harfman-Todorovic, Maja
AU - Losee, Peter
AU - Bolotnikov, Alexander
AU - Kennerly, Stacey
AU - Schuetz, Tobias
AU - Carastro, Fabio
AU - Datta, Rajib
AU - Tao, Fengfeng
AU - Raju, Ravi
AU - Cioffi, Philip
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/25
Y1 - 2016/7/25
N2 - A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175°C. There are 12 GE SiC MOSFET chips per switch and the MOSFET's body diode is utilized as the freewheeling diode. The module's typical on-resistance is 3.8mOhms at 25°C and 5.8mOhms at 175°C. Internal loop inductance measured from DC input terminals is 4.5nH, approximately 75% lower than that of a standard IGBT module. When connected to a low inductance busbars, the module can be switched in 50ns without excessive voltage and current overshoots. Double pulse inductive switching losses at VDS=1000V, Id=450A and TJ=150°C are: EON=21.5mJ, EOFF=16.5mJ and EREC=6mJ. The losses are at least ten times lower when compared to a similarly rated IGBT module, highlighting the SiC advantage for higher switching frequency applications. Short circuit testing was performed, demonstrating good ruggedness albeit the need for a fast protection circuit.
AB - A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175°C. There are 12 GE SiC MOSFET chips per switch and the MOSFET's body diode is utilized as the freewheeling diode. The module's typical on-resistance is 3.8mOhms at 25°C and 5.8mOhms at 175°C. Internal loop inductance measured from DC input terminals is 4.5nH, approximately 75% lower than that of a standard IGBT module. When connected to a low inductance busbars, the module can be switched in 50ns without excessive voltage and current overshoots. Double pulse inductive switching losses at VDS=1000V, Id=450A and TJ=150°C are: EON=21.5mJ, EOFF=16.5mJ and EREC=6mJ. The losses are at least ten times lower when compared to a similarly rated IGBT module, highlighting the SiC advantage for higher switching frequency applications. Short circuit testing was performed, demonstrating good ruggedness albeit the need for a fast protection circuit.
KW - High Efficiency
KW - High Frequency
KW - Industrial Applications
KW - Low Inductance
KW - Power Module
KW - Ruggedness
KW - Short Circuit
KW - SiC MOSFET
UR - http://www.scopus.com/inward/record.url?scp=84982151762&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2016.7520882
DO - 10.1109/ISPSD.2016.7520882
M3 - Conference contribution
AN - SCOPUS:84982151762
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 479
EP - 482
BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Y2 - 12 June 2016 through 16 June 2016
ER -