High-performance organic field-effect transistors with dielectric and active layers printed sequentially by ultrasonic spraying

Ming Shao, Sanjib Das, Kai Xiao, Jihua Chen, Jong K. Keum, Ilia N. Ivanov, Gong Gu, William Durant, Dawen Li, David B. Geohegan

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

High-performance organic field-effect transistors (OFETs) are reported with dielectric and active layers sequentially deposited by ultrasonic spray-printing. A cross-linkable insulator and a soluble small molecule semiconductor are developed which are both printable and highly robust. Using plastic with pre-patterned indium tin oxide gate contacts as required for display applications, two different layers are sequentially spray-printed: the semiconductor 6,13-bis(trisopropylsilylethynyl)pentacene (TIPS-PEN), and the insulator poly-4-vinylphenol (PVP). OFETs printed in ambient air with a bottom-gate/top-contact geometry are shown to achieve on/off ratios of >104 and mobilities up to 0.35 cm2 V-1 s-1. These rival the characteristics of the best solution-processable small molecule FETs fabricated by other processing methods such as drop casting and ink-jet printing.

Original languageEnglish
Pages (from-to)4384-4390
Number of pages7
JournalJournal of Materials Chemistry C
Volume1
Issue number28
DOIs
StatePublished - Jul 28 2013

Fingerprint

Dive into the research topics of 'High-performance organic field-effect transistors with dielectric and active layers printed sequentially by ultrasonic spraying'. Together they form a unique fingerprint.

Cite this