High-performance multilayer WSe2 field-effect transistors with carrier type control

Pushpa Raj Pudasaini; Akinola Oyedele; Cheng Zhang; Michael G. Stanford; Nicholas Cross; Anthony T. Wong; Anna N. Hoffman; Kai Xiao; Gerd Duscher; David G. Mandrus; Thomas Z. Ward; Philip D. Rack

doi:10.1007/s12274-017-1681-5

High-performance multilayer WSe₂ field-effect transistors with carrier type control

Pushpa Raj Pudasaini, Akinola Oyedele, Cheng Zhang, Michael G. Stanford, Nicholas Cross, Anthony T. Wong, Anna N. Hoffman, Kai Xiao, Gerd Duscher, David G. Mandrus, Thomas Z. Ward, Philip D. Rack

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

113 Scopus citations

Abstract

In this study, high-performance multilayer WSe₂ field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe₂ FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe₂ thickness. The carrier type evolves with increasing WSe₂ channel thickness, being p-type, ambipolar, and n-type at thicknesses < 3, ~ 4, and > 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe₂ as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe₂ FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.

Original language	English
Pages (from-to)	722-730
Number of pages	9
Journal	Nano Research
Volume	11
Issue number	2
DOIs	https://doi.org/10.1007/s12274-017-1681-5
State	Published - Feb 2018

Funding

P. D. R. and M. G. S. acknowledge support by U.S. Department of Energy (DOE) under Grant No. DOE DE-SC0002136. P. R. P. and D. G. M. acknowledge funding by the Gordon and Betty Moore Foundation’s EPiQS Initiative through Grant GBMF4416. T. Z. W. acknowledges support U.S. Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division. A. T. W. acknowledges support by Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy. N. C. acknowledges support by National Science Foundation (NSF) (No. DMR-1410940). The authors acknowledge that the device synthesis and Raman mapping were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. P. D. R. and M. G. S. acknowledge support by U.S. Department of Energy (DOE) under Grant No. DOE DE-SC0002136. P. R. P. and D. G. M. acknowledge funding by the Gordon and Betty Moore Foundation’s EPiQS Initiative through Grant GBMF4416. T. Z. W. acknowledges support U.S. Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division. A. T. W. acknowledges support by Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy. N. C. acknowledges support by National Science Foundation (NSF) (No. DMR- 1410940). The authors acknowledge that the device synthesis and Raman mapping were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

Funders	Funder number
Laboratory Directed Research
National Science Foundation	DMR-1410940
U.S. Department of Energy	DOE DE-SC0002136
Gordon and Betty Moore Foundation	GBMF4416
Office of Science
Basic Energy Sciences
Oak Ridge National Laboratory
Division of Materials Sciences and Engineering

Keywords

Carrier control
Carrier mobility
Field-effect transistors
Plasma treatment
Transition metal dichalcogenide

Access to Document

10.1007/s12274-017-1681-5

Cite this

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title = "High-performance multilayer WSe2 field-effect transistors with carrier type control",

abstract = "In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses < 3, ~ 4, and > 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.",

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AU - Wong, Anthony T.

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N2 - In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses < 3, ~ 4, and > 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.

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