High mobility WSe2 p - And n - Field-effect transistors contacted by highly doped graphene for low-resistance contacts

Hsun Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, Meeghage Madusanka Perera, Bhim Chamlagain, Mark Ming Cheng Cheng, Jiaqiang Yan, David Mandrus, David Tománek, Zhixian Zhou

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