High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators

Michael G. Wood; Salvatore Campione; Darwin K. Serkland; S. Parameswaran; Jon Ihlefeld; Ting S. Luk; Joel R. Wendt; Kent M. Geib; Gordon A. Keeler

doi:10.1364/FIO.2017.JW3A.46

High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators

Michael G. Wood, Salvatore Campione, Darwin K. Serkland, S. Parameswaran, Jon Ihlefeld, Ting S. Luk, Joel R. Wendt, Kent M. Geib, Gordon A. Keeler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We study the role of carrier mobility in transparent conducting oxides integrated into epsilon-near-zero modulators. High-mobility materials including CdO enable sub-micron length electroabsorption modulators through >4dB/μm extinction ratios.

Original language	English
Title of host publication	Frontiers in Optics, FiO 2017
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580330
DOIs	https://doi.org/10.1364/FIO.2017.JW3A.46
State	Published - 2017
Externally published	Yes
Event	Frontiers in Optics, FiO 2017 - Washington, United States Duration: Sep 18 2017 → Sep 21 2017

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F66-FiO 2017
ISSN (Electronic)	2162-2701

Conference

Conference	Frontiers in Optics, FiO 2017
Country/Territory	United States
City	Washington
Period	09/18/17 → 09/21/17

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10.1364/FIO.2017.JW3A.46

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Wood, M. G., Campione, S., Serkland, D. K., Parameswaran, S., Ihlefeld, J., Luk, T. S., Wendt, J. R., Geib, K. M., & Keeler, G. A. (2017). High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators. In Frontiers in Optics, FiO 2017 (Optics InfoBase Conference Papers; Vol. Part F66-FiO 2017). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/FIO.2017.JW3A.46

@inproceedings{b1e806c959974838b1854144756d7e45,

title = "High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators",

abstract = "We study the role of carrier mobility in transparent conducting oxides integrated into epsilon-near-zero modulators. High-mobility materials including CdO enable sub-micron length electroabsorption modulators through >4dB/μm extinction ratios.",

author = "Wood, \{Michael G.\} and Salvatore Campione and Serkland, \{Darwin K.\} and S. Parameswaran and Jon Ihlefeld and Luk, \{Ting S.\} and Wendt, \{Joel R.\} and Geib, \{Kent M.\} and Keeler, \{Gordon A.\}",

note = "Publisher Copyright: {\textcopyright} OSA 2017.; Frontiers in Optics, FiO 2017 ; Conference date: 18-09-2017 Through 21-09-2017",

year = "2017",

doi = "10.1364/FIO.2017.JW3A.46",

language = "English",

isbn = "9781943580330",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

booktitle = "Frontiers in Optics, FiO 2017",

}

Wood, MG, Campione, S, Serkland, DK, Parameswaran, S, Ihlefeld, J, Luk, TS, Wendt, JR, Geib, KM & Keeler, GA 2017, High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators. in Frontiers in Optics, FiO 2017. Optics InfoBase Conference Papers, vol. Part F66-FiO 2017, Optica Publishing Group (formerly OSA), Frontiers in Optics, FiO 2017, Washington, United States, 09/18/17. https://doi.org/10.1364/FIO.2017.JW3A.46

High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators. / Wood, Michael G.; Campione, Salvatore; Serkland, Darwin K. et al.
Frontiers in Optics, FiO 2017. Optica Publishing Group (formerly OSA), 2017. (Optics InfoBase Conference Papers; Vol. Part F66-FiO 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators

AU - Wood, Michael G.

AU - Campione, Salvatore

AU - Serkland, Darwin K.

AU - Parameswaran, S.

AU - Ihlefeld, Jon

AU - Luk, Ting S.

AU - Wendt, Joel R.

AU - Geib, Kent M.

AU - Keeler, Gordon A.

PY - 2017

Y1 - 2017

N2 - We study the role of carrier mobility in transparent conducting oxides integrated into epsilon-near-zero modulators. High-mobility materials including CdO enable sub-micron length electroabsorption modulators through >4dB/μm extinction ratios.

AB - We study the role of carrier mobility in transparent conducting oxides integrated into epsilon-near-zero modulators. High-mobility materials including CdO enable sub-micron length electroabsorption modulators through >4dB/μm extinction ratios.

UR - https://www.scopus.com/pages/publications/85035151851

U2 - 10.1364/FIO.2017.JW3A.46

DO - 10.1364/FIO.2017.JW3A.46

M3 - Conference contribution

AN - SCOPUS:85035151851

SN - 9781943580330

T3 - Optics InfoBase Conference Papers

BT - Frontiers in Optics, FiO 2017

PB - Optica Publishing Group (formerly OSA)

T2 - Frontiers in Optics, FiO 2017

Y2 - 18 September 2017 through 21 September 2017

ER -

High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators

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