High mobility amorphous InGaZnO4 thin film transistors formed by CO2 laser spike annealing

Chen Yang Chung; Bin Zhu; Dieter G. Ast; Raymond G. Greene; Michael O. Thompson

doi:10.1063/1.4914373

High mobility amorphous InGaZnO₄ thin film transistors formed by CO₂ laser spike annealing

Chen Yang Chung
, Bin Zhu
, Dieter G. Ast
, Raymond G. Greene
, Michael O. Thompson

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Amorphous InGaZnO₄ (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO₂ laser. For peak annealing temperatures near 430?°C and a 1?ms dwell, TFTs exhibit saturation field-effect mobilities above 70?cm²/V-s (V_on?∼?-3?V), a value over 4 times higher than furnace-annealed control samples (∼16?cm²/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

Original language	English
Article number	123506
Journal	Applied Physics Letters
Volume	106
Issue number	12
DOIs	https://doi.org/10.1063/1.4914373
State	Published - Mar 23 2015
Externally published	Yes

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10.1063/1.4914373

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title = "High mobility amorphous InGaZnO4 thin film transistors formed by CO2 laser spike annealing",

abstract = "Amorphous InGaZnO4 (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO2 laser. For peak annealing temperatures near 430?°C and a 1?ms dwell, TFTs exhibit saturation field-effect mobilities above 70?cm2/V-s (Von?∼?-3?V), a value over 4 times higher than furnace-annealed control samples (∼16?cm2/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.",

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doi = "10.1063/1.4914373",

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T1 - High mobility amorphous InGaZnO4 thin film transistors formed by CO2 laser spike annealing

AU - Chung, Chen Yang

AU - Zhu, Bin

AU - Ast, Dieter G.

AU - Greene, Raymond G.

AU - Thompson, Michael O.

PY - 2015/3/23

Y1 - 2015/3/23

N2 - Amorphous InGaZnO4 (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO2 laser. For peak annealing temperatures near 430?°C and a 1?ms dwell, TFTs exhibit saturation field-effect mobilities above 70?cm2/V-s (Von?∼?-3?V), a value over 4 times higher than furnace-annealed control samples (∼16?cm2/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

AB - Amorphous InGaZnO4 (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO2 laser. For peak annealing temperatures near 430?°C and a 1?ms dwell, TFTs exhibit saturation field-effect mobilities above 70?cm2/V-s (Von?∼?-3?V), a value over 4 times higher than furnace-annealed control samples (∼16?cm2/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

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VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

High mobility amorphous InGaZnO₄ thin film transistors formed by CO₂ laser spike annealing

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