High field dielectric response in κ-Ga2O3 films

Fan He; Kunyao Jiang; Yeseul Choi; Benjamin L. Aronson; Smitha Shetty; Jingyu Tang; Bangzhi Liu; Yongtao Liu; Kyle P. Kelley; Gilbert B. Rayner; Robert F. Davis; Lisa M. Porter; Susan Trolier-McKinstry

doi:10.1063/5.0169420

High field dielectric response in κ-Ga₂O₃ films

Fan He, Kunyao Jiang, Yeseul Choi, Benjamin L. Aronson, Smitha Shetty, Jingyu Tang, Bangzhi Liu, Yongtao Liu, Kyle P. Kelley, Gilbert B. Rayner, Robert F. Davis, Lisa M. Porter, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

κ-Ga₂O₃ has been predicted to be a potential ferroelectric material. In this work, undoped Ga₂O₃ films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga₂O₃ and β-Ga₂O₃ had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga₂O₃ phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga₂O₃ showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

Original language	English
Article number	204101
Journal	Journal of Applied Physics
Volume	134
Issue number	20
DOIs	https://doi.org/10.1063/5.0169420
State	Published - Nov 28 2023

Funding

This ALD growth, electrical characterization, and analysis are based upon work supported by the Center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences under Award No. DE-SC0021118. The authors also acknowledge II-VI Foundation for support of the research at Carnegie Mellon University for the MOCVD growth. The use of the Materials Characterization Facility at Carnegie Mellon was supported by Grant No. MCF-677785.

Funders	Funder number
center for 3D Ferroelectric Microelectronics
II-VI Foundation
U.S. Department of Energy
Office of Science
Basic Energy Sciences	DE-SC0021118
Carnegie Mellon University	MCF-677785

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@article{80eaf9c0ded64f2ebaa65e9dcd14ec95,

title = "High field dielectric response in κ-Ga2O3 films",

abstract = "κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.",

author = "Fan He and Kunyao Jiang and Yeseul Choi and Aronson, {Benjamin L.} and Smitha Shetty and Jingyu Tang and Bangzhi Liu and Yongtao Liu and Kelley, {Kyle P.} and Rayner, {Gilbert B.} and Davis, {Robert F.} and Porter, {Lisa M.} and Susan Trolier-McKinstry",

note = "Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = nov,

day = "28",

doi = "10.1063/5.0169420",

language = "English",

volume = "134",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - High field dielectric response in κ-Ga2O3 films

AU - He, Fan

AU - Jiang, Kunyao

AU - Choi, Yeseul

AU - Aronson, Benjamin L.

AU - Shetty, Smitha

AU - Tang, Jingyu

AU - Liu, Bangzhi

AU - Liu, Yongtao

AU - Kelley, Kyle P.

AU - Rayner, Gilbert B.

AU - Davis, Robert F.

AU - Porter, Lisa M.

AU - Trolier-McKinstry, Susan

PY - 2023/11/28

Y1 - 2023/11/28

N2 - κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

AB - κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

UR - http://www.scopus.com/inward/record.url?scp=85178342747&partnerID=8YFLogxK

U2 - 10.1063/5.0169420

DO - 10.1063/5.0169420

M3 - Article

AN - SCOPUS:85178342747

SN - 0021-8979

VL - 134

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 20

M1 - 204101

ER -

High field dielectric response in κ-Ga₂O₃ films

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