Abstract
Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems.
| Original language | English |
|---|---|
| Pages (from-to) | 312-317 |
| Number of pages | 6 |
| Journal | Science |
| Volume | 384 |
| Issue number | 6693 |
| DOIs | |
| State | Published - Apr 19 2024 |
| Externally published | Yes |
Funding
Funding: S.-H.B. acknowledges support from the Institute of Materials Science and Engineering (IMSE), Washington University in St. Louis. S.-H.B. acknowledges financial support from the National Science Foundation (grant no. 2240995). S.-H.B. also acknowledges that this work was partially supported by Samsung Electronics Co., Ltd. (IO221219-04250-01). D.-H.K. acknowledges support from a Korea Institute for Advancement of Technology (KIAT) grant funded by the Korean government (MOTIE) [P0017305, Human Resource Development Program for Industrial Innovation (Global)]. J.-H.A. was supported by the National Research Foundation of Korea (2015R1A3A2066337). A.O. acknowledges financial support from Georgia Tech Europe in Metz-France. R.M. was supported by the Army Research Office (ARO) Multidisciplinary University Research Initiative (MURI) under award no.W911NF-21-1-0327 and the NSF through DMR-2122070 and DMR-2145797. This work used computational resources through allocation DMR160007 from the Advanced Cyberinfrastructure Coordination Ecosystem: Services & Support (ACCESS) program, which is supported by the NSF. This work was carried out in part through the use of MIT.nano\u2019s facilities. E.P. acknowledges funding from a MathWorks fellowship. S.-H.B. acknowledges financial support from the National Science Foundation (grant no. 2240995). S.-H.B. also acknowledges that this work was partially supported by Samsung Electronics Co., Ltd. (IO221219-04250-01). D.-H.K. acknowledges support from a Korea Institute for Advancement of Technology (KIAT) grant funded by the Korean government (MOTIE) [P0017305, Human Resource Development Program for Industrial Innovation (Global)]. J.-H.A. was supported by the National Research Foundation of Korea (2015R1A3A2066337). A.O. acknowledges financial support from Georgia Tech Europe in Metz-France. R.M. was supported by the Army Research Office (ARO) Multidisciplinary University Research Initiative (MURI) under award no.W911NF-21-1-0327 and the NSF through DMR-2122070 and DMR-2145797. This work used computational resources through allocation DMR160007 from the Advanced Cyberinfrastructure Coordination Ecosystem: Services & Support (ACCESS) program, which is supported by the NSF. This work was carried out in part through the use of MIT.nano\u2019s facilities. E.P. acknowledges funding from a MathWorks fellowship. Author contributions: S.-H.B., S.H., and J.S.K. conceived this study. J.S.K., E.P., Y.M., Z.X., I.R., S.O.K., and Y.L. fabricated the samples and performed the experiment, with the supervision of S.-H.B. and S.H. S.L., X.Z., and B.-I.P. performed the structural performance of samples, under the supervision of J.Ki. J.-Y.M., S.-I.K., H.S., A.T.H., S.Su., P.V., A.O., J.-H.L., and J.-H.A. prepared the 2D materials. G.Y.J. reviewed the theory about dielectric relaxation under the supervision of R.M. E.P., A.C.F., and K.R. performed the STEM and iDPC characterization under the supervision of F.M.R. S.Se. and J.-H.P. analyzed the 2D/3D and 3D/3D interfaces. S.B., C.K., J.Z., C.W., J.Kw., and D.-H.K. performed the electrical measurement. J.H., H.C., and H.-S.K. conducted the breakdown performance. S.-H.B. and S.H. wrote the first draft of the manuscript. All authors discussed the results and revised the manuscript. Competing interests: S.H. and S.-H.B. are inventors on patent application no. 63/617,314 assigned to Washington University that covers heterostructures that have a van der Waals interface for high\u2013energy density capacitors. Data and materials availability: All data are available in the main text or the supplementary materials. License information: Copyright \u00A9 2024 the authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original US government works. https://www.science.org/about/science-licenses-journal-article-reuse
| Funders | Funder number |
|---|---|
| Washington University in St. Louis | |
| Korea Institute for Advancement of Technology | |
| Institute of Materials Science and Engineering, Washington University in St. Louis | |
| Army Research Office | |
| Georgia Tech Europe in Metz-France | |
| National Science Foundation | DMR-2145797, DMR-2122070, 2240995, DMR160007 |
| National Science Foundation | |
| Ministry of Trade, Industry and Energy | P0017305 |
| Ministry of Trade, Industry and Energy | |
| National Research Foundation of Korea | 2015R1A3A2066337 |
| National Research Foundation of Korea | |
| Samsung | IO221219-04250-01 |
| Samsung |