High-efficiency single-junction p-i-n GaAs solar cell on roll-to-roll epi-ready flexible metal foils for low-cost photovoltaics

Devendra Khatiwada, Carlos A. Favela, Sicong Sun, Chuanze Zhang, Sahil Sharma, Monika Rathi, Pavel Dutta, Eduard Galstyan, Alex Belianinov, Anton V. Ievlev, Sara Pouladi, Anastasiia Fedorenko, Jae Hyun Ryou, Seth Hubbard, Venkat Selvamanickam

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We demonstrate the fabrication and characterization of high-efficiency, single-junction p-i-n GaAs solar cells, on flexible metal foil with epi-ready buffer via roll-to-roll fabrication. Single-junction p-i-n GaAs solar cells were fabricated using metal–organic chemical vapor deposition (MOCVD). An efficiency greater than 13% was obtained at 1 sun, which is the highest reported efficiency on GaAs photovoltaics directly deposited on metal tapes. This exceeds our previously reported study showcasing 11.5% efficiency on single-junction p-n solar cell structure. Improved morphology of p-i-n structure compared with p-n is explained by atomic force microscopy (AFM), scanning electron microscopy (SEM), and helium ion microscopy (HIM) measurements. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis showed reduced Zn diffusion in p-i-n cell compared with the p-n cell. We attribute the improvement in efficiency of p-i-n cells on flexible metal tapes to the quality of the junction, surface morphology, controlled diffusion of species within the active layers, and increase in absorption due to the optimized intrinsic layer thickness.

Original languageEnglish
Pages (from-to)1107-1119
Number of pages13
JournalProgress in Photovoltaics: Research and Applications
Volume28
Issue number11
DOIs
StatePublished - Nov 1 2020

Funding

This work is partially funded by the US Department of Energy SunShot Initiative award DE-EE0006711. The HIM and ToF-SIMS aspects of the research were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and using instrumentation within ORNL's Materials Characterization Core provided by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the US Department of Energy. This work is partially funded by the US Department of Energy SunShot Initiative award DE‐EE0006711. The HIM and ToF‐SIMS aspects of the research were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and using instrumentation within ORNL's Materials Characterization Core provided by UT‐Battelle, LLC under Contract No. DE‐AC05‐00OR22725 with the US Department of Energy.

Keywords

  • GaAs
  • HIM
  • MOCVD
  • efficiency
  • flexible
  • roll-to-roll

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