High efficiency 1.06μm wavelength high power diode array module

Shun Yao; Ge Tao Tao; Yun Liu; Xiang Peng Wang; Di Yao; Li Jun Wang

High efficiency 1.06μm wavelength high power diode array module

Shun Yao, Ge Tao Tao, Yun Liu, Xiang Peng Wang, Di Yao, Li Jun Wang

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

1.06 μm emitting broad-waveguide-type InGaAs/InGaAsP strained-compensated single-quantum well laser arrays is fabricated. Ohmic-contact technology is optimized for wall-plug efficiency. The module's wall-plug efficiency can reach to 56.9% at a CW output power of 50.2 W. The threshold current is less than 10 A and the central wavelength is 1054. 5 nm at 50 A.

Original language	English
Pages (from-to)	260-262
Number of pages	3
Journal	Bandaoti Guangdian/Semiconductor Optoelectronics
Volume	27
Issue number	3
State	Published - Jun 2006

Keywords

Array module
High power
Semiconductor laser

Cite this

@article{81b7df483b854797b1cca3c20b77b376,

title = "High efficiency 1.06μm wavelength high power diode array module",

abstract = "1.06 μm emitting broad-waveguide-type InGaAs/InGaAsP strained-compensated single-quantum well laser arrays is fabricated. Ohmic-contact technology is optimized for wall-plug efficiency. The module's wall-plug efficiency can reach to 56.9\% at a CW output power of 50.2 W. The threshold current is less than 10 A and the central wavelength is 1054. 5 nm at 50 A.",

keywords = "Array module, High power, Semiconductor laser",

author = "Shun Yao and Tao, \{Ge Tao\} and Yun Liu and Wang, \{Xiang Peng\} and Di Yao and Wang, \{Li Jun\}",

year = "2006",

month = jun,

language = "English",

volume = "27",

pages = "260--262",

journal = "Bandaoti Guangdian/Semiconductor Optoelectronics",

issn = "1001-5868",

number = "3",

}

TY - JOUR

T1 - High efficiency 1.06μm wavelength high power diode array module

AU - Yao, Shun

AU - Tao, Ge Tao

AU - Liu, Yun

AU - Wang, Xiang Peng

AU - Yao, Di

AU - Wang, Li Jun

PY - 2006/6

Y1 - 2006/6

N2 - 1.06 μm emitting broad-waveguide-type InGaAs/InGaAsP strained-compensated single-quantum well laser arrays is fabricated. Ohmic-contact technology is optimized for wall-plug efficiency. The module's wall-plug efficiency can reach to 56.9% at a CW output power of 50.2 W. The threshold current is less than 10 A and the central wavelength is 1054. 5 nm at 50 A.

AB - 1.06 μm emitting broad-waveguide-type InGaAs/InGaAsP strained-compensated single-quantum well laser arrays is fabricated. Ohmic-contact technology is optimized for wall-plug efficiency. The module's wall-plug efficiency can reach to 56.9% at a CW output power of 50.2 W. The threshold current is less than 10 A and the central wavelength is 1054. 5 nm at 50 A.

KW - Array module

KW - High power

KW - Semiconductor laser

UR - https://www.scopus.com/pages/publications/33746822278

M3 - Article

AN - SCOPUS:33746822278

SN - 1001-5868

VL - 27

SP - 260

EP - 262

JO - Bandaoti Guangdian/Semiconductor Optoelectronics

JF - Bandaoti Guangdian/Semiconductor Optoelectronics

IS - 3

ER -

High efficiency 1.06μm wavelength high power diode array module

Abstract

Keywords

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