High critical current density in epitaxial HgBa2CaCu2OX thin films

S. L. Yan; Y. Y. Xie; J. Z. Wu; T. Aytug; A. A. Gapud; B. W. Kang; L. Fang; M. He; S. C. Tidrow; K. W. Kirchner; J. R. Liu; W. K. Chu

doi:10.1063/1.122653

High critical current density in epitaxial HgBa₂CaCu₂O_X thin films

S. L. Yan
, Y. Y. Xie
, J. Z. Wu
, T. Aytug
, A. A. Gapud
, B. W. Kang
, L. Fang
, M. He
, S. C. Tidrow
, K. W. Kirchner
, J. R. Liu
, W. K. Chu

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

High quality superconducting HgBa₂CaCu₂O_x (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density J_c is up to 3.2×10⁶A/cm² at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a J_c of 7.8×10⁵A/cm² has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO₃(001) substrates, which is consistent with a χ_min of 19% obtained using Rutherford backscattering/channeling analysis.

Original language	English
Pages (from-to)	2989-2991
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	20
DOIs	https://doi.org/10.1063/1.122653
State	Published - 1998
Externally published	Yes

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@article{f6836069e51f4f848c822518cd8467df,

title = "High critical current density in epitaxial HgBa2CaCu2OX thin films",

abstract = "High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density Jc is up to 3.2×106A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19\% obtained using Rutherford backscattering/channeling analysis.",

author = "Yan, \{S. L.\} and Xie, \{Y. Y.\} and Wu, \{J. Z.\} and T. Aytug and Gapud, \{A. A.\} and Kang, \{B. W.\} and L. Fang and M. He and Tidrow, \{S. C.\} and Kirchner, \{K. W.\} and Liu, \{J. R.\} and Chu, \{W. K.\}",

year = "1998",

doi = "10.1063/1.122653",

language = "English",

volume = "73",

pages = "2989--2991",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - High critical current density in epitaxial HgBa2CaCu2OX thin films

AU - Yan, S. L.

AU - Xie, Y. Y.

AU - Wu, J. Z.

AU - Aytug, T.

AU - Gapud, A. A.

AU - Kang, B. W.

AU - Fang, L.

AU - He, M.

AU - Tidrow, S. C.

AU - Kirchner, K. W.

AU - Liu, J. R.

AU - Chu, W. K.

PY - 1998

Y1 - 1998

N2 - High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density Jc is up to 3.2×106A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis.

AB - High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density Jc is up to 3.2×106A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis.

UR - https://www.scopus.com/pages/publications/0032538725

U2 - 10.1063/1.122653

DO - 10.1063/1.122653

M3 - Article

AN - SCOPUS:0032538725

SN - 0003-6951

VL - 73

SP - 2989

EP - 2991

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

High critical current density in epitaxial HgBa₂CaCu₂O_X thin films

Abstract

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