High critical current density in epitaxial HgBa2CaCu2OX thin films

S. L. Yan; Y. Y. Xie; J. Z. Wu; T. Aytug; A. A. Gapud; B. W. Kang; L. Fang; M. He; S. C. Tidrow; K. W. Kirchner; J. R. Liu; W. K. Chu

doi:10.1063/1.122653

High critical current density in epitaxial HgBa₂CaCu₂O_X thin films

S. L. Yan, Y. Y. Xie, J. Z. Wu, T. Aytug, A. A. Gapud, B. W. Kang, L. Fang, M. He, S. C. Tidrow, K. W. Kirchner, J. R. Liu, W. K. Chu

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Abstract

High quality superconducting HgBa₂CaCu₂O_x (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density J_c is up to 3.2×10⁶A/cm² at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a J_c of 7.8×10⁵A/cm² has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO₃(001) substrates, which is consistent with a χ_min of 19% obtained using Rutherford backscattering/channeling analysis.

Original language	English
Pages (from-to)	2989-2991
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	20
DOIs	https://doi.org/10.1063/1.122653
State	Published - 1998
Externally published	Yes

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title = "High critical current density in epitaxial HgBa2CaCu2OX thin films",

abstract = "High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density Jc is up to 3.2×106A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis.",

author = "Yan, {S. L.} and Xie, {Y. Y.} and Wu, {J. Z.} and T. Aytug and Gapud, {A. A.} and Kang, {B. W.} and L. Fang and M. He and Tidrow, {S. C.} and Kirchner, {K. W.} and Liu, {J. R.} and Chu, {W. K.}",

year = "1998",

doi = "10.1063/1.122653",

language = "English",

volume = "73",

pages = "2989--2991",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

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TY - JOUR

T1 - High critical current density in epitaxial HgBa2CaCu2OX thin films

AU - Yan, S. L.

AU - Xie, Y. Y.

AU - Wu, J. Z.

AU - Aytug, T.

AU - Gapud, A. A.

AU - Kang, B. W.

AU - Fang, L.

AU - He, M.

AU - Tidrow, S. C.

AU - Kirchner, K. W.

AU - Liu, J. R.

AU - Chu, W. K.

PY - 1998

Y1 - 1998

N2 - High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density Jc is up to 3.2×106A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis.

AB - High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120-124 K. The critical current density Jc is up to 3.2×106A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis.

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U2 - 10.1063/1.122653

DO - 10.1063/1.122653

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VL - 73

SP - 2989

EP - 2991

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

High critical current density in epitaxial HgBa₂CaCu₂O_X thin films

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