High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits

Michael G. Stanford; Pushpa R. Pudasaini; Elisabeth T. Gallmeier; Nicholas Cross; Liangbo Liang; Akinola Oyedele; Gerd Duscher; Masoud Mahjouri-Samani; Kai Wang; Kai Xiao; David B. Geohegan; Alex Belianinov; Bobby G. Sumpter; Philip D. Rack

doi:10.1002/adfm.201702829

High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits

Michael G. Stanford, Pushpa R. Pudasaini, Elisabeth T. Gallmeier, Nicholas Cross, Liangbo Liang, Akinola Oyedele, Gerd Duscher, Masoud Mahjouri-Samani, Kai Wang, Kai Xiao, David B. Geohegan, Alex Belianinov, Bobby G. Sumpter, Philip D. Rack

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with 2D lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, tunable transport behavior is reported which is introduced into single layer tungsten diselenide and tungsten disulfide by focused He⁺ irradiation. Pseudometallic behavior is induced by irradiating the materials with a dose of ≈1 × 10¹⁶ He⁺ cm⁻² to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hopping mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe₂ at a critical dose of 1 × 10¹⁶ He⁺ cm⁻². First-principle calculations confirm the semiconductor-to-metallic transition of WSe₂ after pore and edge defects are introduced by He⁺ irradiation. The hopping conduction is utilized to direct-write resistor loaded logic circuits in WSe₂ and WS₂ with a voltage gain of greater than 5. Edge contacted thin film transistors are also fabricated with a high on/off ratio (>10⁶), demonstrating potential for the formation of atomically thin circuits.

Original language	English
Article number	1702829
Journal	Advanced Functional Materials
Volume	27
Issue number	36
DOIs	https://doi.org/10.1002/adfm.201702829
State	Published - Sep 26 2017

Funding

P.D.R., M.G.S., and P.R.P. acknowledge support by US Department of Energy (DOE) under Grant No. DOE DE-SC0002136. N.C. and G.D. acknowledge support from the National Science Foundation (NSF) under Grant No. DMR-1410940. Electron microscopy at ORNL was sponsored by U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The authors acknowledge Dr. Ilia N. Ivanov for technical assistance in confocal micro-Raman experiments which were conducted under user research proposal CNMS 2016-066. The authors acknowledge that the device fabrication, Raman spectroscopy, STEM imaging, and helium ion irradiation were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. E.T.G., A.B., M.M.S., K.W., D.B.G., B.G.S., L.L., and K.X. acknowledge support from the Center for Nanophase Materials Sciences. The synthesis of 2D materials (M.M.S, K.W., K.X., D.G.) was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division and performed in part as a user project at the Center for Nanophase Materials Sciences. This manuscript was authored by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).

Keywords

2D materials
atomically thin circuits
defect networks
helium ion microscopy
transition metal dichalcogenides

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10.1002/adfm.201702829

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Stanford, M. G., Pudasaini, P. R., Gallmeier, E. T., Cross, N., Liang, L., Oyedele, A., Duscher, G., Mahjouri-Samani, M., Wang, K., Xiao, K., Geohegan, D. B., Belianinov, A., Sumpter, B. G., & Rack, P. D. (2017). High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits. Advanced Functional Materials, 27(36), Article 1702829. https://doi.org/10.1002/adfm.201702829

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title = "High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits",

abstract = "Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with 2D lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, tunable transport behavior is reported which is introduced into single layer tungsten diselenide and tungsten disulfide by focused He+ irradiation. Pseudometallic behavior is induced by irradiating the materials with a dose of ≈1 × 1016 He+ cm−2 to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hopping mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe2 at a critical dose of 1 × 1016 He+ cm−2. First-principle calculations confirm the semiconductor-to-metallic transition of WSe2 after pore and edge defects are introduced by He+ irradiation. The hopping conduction is utilized to direct-write resistor loaded logic circuits in WSe2 and WS2 with a voltage gain of greater than 5. Edge contacted thin film transistors are also fabricated with a high on/off ratio (>106), demonstrating potential for the formation of atomically thin circuits.",

keywords = "2D materials, atomically thin circuits, defect networks, helium ion microscopy, transition metal dichalcogenides",

author = "Stanford, {Michael G.} and Pudasaini, {Pushpa R.} and Gallmeier, {Elisabeth T.} and Nicholas Cross and Liangbo Liang and Akinola Oyedele and Gerd Duscher and Masoud Mahjouri-Samani and Kai Wang and Kai Xiao and Geohegan, {David B.} and Alex Belianinov and Sumpter, {Bobby G.} and Rack, {Philip D.}",

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year = "2017",

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Stanford, MG, Pudasaini, PR, Gallmeier, ET, Cross, N, Liang, L, Oyedele, A, Duscher, G, Mahjouri-Samani, M, Wang, K, Xiao, K, Geohegan, DB, Belianinov, A, Sumpter, BG & Rack, PD 2017, 'High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits', Advanced Functional Materials, vol. 27, no. 36, 1702829. https://doi.org/10.1002/adfm.201702829

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T1 - High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks

T2 - Toward Atomically Thin Circuits

AU - Stanford, Michael G.

AU - Pudasaini, Pushpa R.

AU - Gallmeier, Elisabeth T.

AU - Cross, Nicholas

AU - Liang, Liangbo

AU - Oyedele, Akinola

AU - Duscher, Gerd

AU - Mahjouri-Samani, Masoud

AU - Wang, Kai

AU - Xiao, Kai

AU - Geohegan, David B.

AU - Belianinov, Alex

AU - Sumpter, Bobby G.

AU - Rack, Philip D.

PY - 2017/9/26

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N2 - Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with 2D lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, tunable transport behavior is reported which is introduced into single layer tungsten diselenide and tungsten disulfide by focused He+ irradiation. Pseudometallic behavior is induced by irradiating the materials with a dose of ≈1 × 1016 He+ cm−2 to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hopping mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe2 at a critical dose of 1 × 1016 He+ cm−2. First-principle calculations confirm the semiconductor-to-metallic transition of WSe2 after pore and edge defects are introduced by He+ irradiation. The hopping conduction is utilized to direct-write resistor loaded logic circuits in WSe2 and WS2 with a voltage gain of greater than 5. Edge contacted thin film transistors are also fabricated with a high on/off ratio (>106), demonstrating potential for the formation of atomically thin circuits.

AB - Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with 2D lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, tunable transport behavior is reported which is introduced into single layer tungsten diselenide and tungsten disulfide by focused He+ irradiation. Pseudometallic behavior is induced by irradiating the materials with a dose of ≈1 × 1016 He+ cm−2 to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hopping mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe2 at a critical dose of 1 × 1016 He+ cm−2. First-principle calculations confirm the semiconductor-to-metallic transition of WSe2 after pore and edge defects are introduced by He+ irradiation. The hopping conduction is utilized to direct-write resistor loaded logic circuits in WSe2 and WS2 with a voltage gain of greater than 5. Edge contacted thin film transistors are also fabricated with a high on/off ratio (>106), demonstrating potential for the formation of atomically thin circuits.

KW - 2D materials

KW - atomically thin circuits

KW - defect networks

KW - helium ion microscopy

KW - transition metal dichalcogenides

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DO - 10.1002/adfm.201702829

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VL - 27

JO - Advanced Functional Materials

JF - Advanced Functional Materials

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M1 - 1702829

ER -

High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits

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