Abstract
High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the nearly diffraction-limited beam quality has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW. The electro-optical properties of tapered lasers are also discussed. The results reported in this paper may become a step forward to new applications of tapered diode lasers.
| Original language | English |
|---|---|
| Journal | Optics InfoBase Conference Papers |
| DOIs | |
| State | Published - 2011 |
| Externally published | Yes |
| Event | CIOMP-OSA Summer Session: Lasers and Their Applications, SumSession 2011 - Changchun, China Duration: Jul 31 2011 → Aug 5 2011 |
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