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High-brightness 850 nm tapered laser diodes

  • Ye Yang
  • , Yun Liu
  • , Li Qin
  • , Jinlong Zhang
  • , Yongqiang Ning
  • , Lijun Wang

Research output: Contribution to journalConference articlepeer-review

Abstract

High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the nearly diffraction-limited beam quality has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW. The electro-optical properties of tapered lasers are also discussed. The results reported in this paper may become a step forward to new applications of tapered diode lasers.

Original languageEnglish
JournalOptics InfoBase Conference Papers
DOIs
StatePublished - 2011
Externally publishedYes
EventCIOMP-OSA Summer Session: Lasers and Their Applications, SumSession 2011 - Changchun, China
Duration: Jul 31 2011Aug 5 2011

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