Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers

Qiang Wu; Sudharsan Chinnaiyan; Mohammad Dehan Rahman; Yuxiang Chen; John Fraley; Brian Rowden; Yash Veer Singh; Monoj Ghosh; Chanyeop Park; Xiaoqing Song; Zhong Chen; H. Alan Mantooth

doi:10.1109/ECCE58356.2025.11259799

Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers

Qiang Wu
, Sudharsan Chinnaiyan
, Mohammad Dehan Rahman
, Yuxiang Chen
, John Fraley
, Brian Rowden
, Yash Veer Singh
, Monoj Ghosh
, Chanyeop Park
, Xiaoqing Song
, Zhong Chen
, H. Alan Mantooth

Grid Systems Hardware

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The continuous pursuit of higher efficiency and power density in power electronic systems has placed increasingly demanding performance requirements on power modules. Benefiting from features such as higher integration, lower parasitics, and higher switching speeds, intelligent power modules can achieve higher power density, lower switching losses, and higher switching frequency. This work presents a heterogeneously integrated 3.3 kV SiC MOSFET power module capable of ultrafast switching, featuring integrated decoupling capacitors and a multi-layer substrate to minimize power loop inductance, along with built-in gate drivers to reduce gate loop inductance. A prototype of the proposed module has been built and validated through double-pulse tests.

Original language	English
Title of host publication	2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331541309
DOIs	https://doi.org/10.1109/ECCE58356.2025.11259799
State	Published - 2025
Event	17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025 - Philadelphia, United States Duration: Oct 19 2025 → Oct 23 2025

Publication series

Name	2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025

Conference

Conference	17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
Country/Territory	United States
City	Philadelphia
Period	10/19/25 → 10/23/25

Funding

This work is supported by the U.S. Department of Energy, Advanced Research Project Agency - Energy (ARPA-E) through award: DE-AR0001823.

Keywords

heterogeneously integration
medium voltage (MV)
multi-layer substrate
power module
silicon carbide (SiC)

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10.1109/ECCE58356.2025.11259799

Cite this

Wu, Q., Chinnaiyan, S., Rahman, M. D., Chen, Y., Fraley, J., Rowden, B., Singh, Y. V., Ghosh, M., Park, C., Song, X., Chen, Z., & Mantooth, H. A. (2025). Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers. In 2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025 (2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE58356.2025.11259799

Wu, Qiang ; Chinnaiyan, Sudharsan ; Rahman, Mohammad Dehan et al. / Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers. 2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025).

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title = "Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers",

abstract = "The continuous pursuit of higher efficiency and power density in power electronic systems has placed increasingly demanding performance requirements on power modules. Benefiting from features such as higher integration, lower parasitics, and higher switching speeds, intelligent power modules can achieve higher power density, lower switching losses, and higher switching frequency. This work presents a heterogeneously integrated 3.3 kV SiC MOSFET power module capable of ultrafast switching, featuring integrated decoupling capacitors and a multi-layer substrate to minimize power loop inductance, along with built-in gate drivers to reduce gate loop inductance. A prototype of the proposed module has been built and validated through double-pulse tests.",

keywords = "heterogeneously integration, medium voltage (MV), multi-layer substrate, power module, silicon carbide (SiC)",

author = "Qiang Wu and Sudharsan Chinnaiyan and Rahman, \{Mohammad Dehan\} and Yuxiang Chen and John Fraley and Brian Rowden and Singh, \{Yash Veer\} and Monoj Ghosh and Chanyeop Park and Xiaoqing Song and Zhong Chen and Mantooth, \{H. Alan\}",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025 ; Conference date: 19-10-2025 Through 23-10-2025",

year = "2025",

doi = "10.1109/ECCE58356.2025.11259799",

language = "English",

series = "2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025",

}

Wu, Q, Chinnaiyan, S, Rahman, MD, Chen, Y, Fraley, J, Rowden, B, Singh, YV, Ghosh, M, Park, C, Song, X, Chen, Z & Mantooth, HA 2025, Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers. in 2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025. 2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025, Institute of Electrical and Electronics Engineers Inc., 17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025, Philadelphia, United States, 10/19/25. https://doi.org/10.1109/ECCE58356.2025.11259799

Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers. / Wu, Qiang; Chinnaiyan, Sudharsan; Rahman, Mohammad Dehan et al.
2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers

AU - Wu, Qiang

AU - Chinnaiyan, Sudharsan

AU - Rahman, Mohammad Dehan

AU - Chen, Yuxiang

AU - Fraley, John

AU - Rowden, Brian

AU - Singh, Yash Veer

AU - Ghosh, Monoj

AU - Park, Chanyeop

AU - Song, Xiaoqing

AU - Chen, Zhong

AU - Mantooth, H. Alan

PY - 2025

Y1 - 2025

N2 - The continuous pursuit of higher efficiency and power density in power electronic systems has placed increasingly demanding performance requirements on power modules. Benefiting from features such as higher integration, lower parasitics, and higher switching speeds, intelligent power modules can achieve higher power density, lower switching losses, and higher switching frequency. This work presents a heterogeneously integrated 3.3 kV SiC MOSFET power module capable of ultrafast switching, featuring integrated decoupling capacitors and a multi-layer substrate to minimize power loop inductance, along with built-in gate drivers to reduce gate loop inductance. A prototype of the proposed module has been built and validated through double-pulse tests.

AB - The continuous pursuit of higher efficiency and power density in power electronic systems has placed increasingly demanding performance requirements on power modules. Benefiting from features such as higher integration, lower parasitics, and higher switching speeds, intelligent power modules can achieve higher power density, lower switching losses, and higher switching frequency. This work presents a heterogeneously integrated 3.3 kV SiC MOSFET power module capable of ultrafast switching, featuring integrated decoupling capacitors and a multi-layer substrate to minimize power loop inductance, along with built-in gate drivers to reduce gate loop inductance. A prototype of the proposed module has been built and validated through double-pulse tests.

KW - heterogeneously integration

KW - medium voltage (MV)

KW - multi-layer substrate

KW - power module

KW - silicon carbide (SiC)

UR - https://www.scopus.com/pages/publications/105030322789

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DO - 10.1109/ECCE58356.2025.11259799

M3 - Conference contribution

AN - SCOPUS:105030322789

T3 - 2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025

BT - 2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025

Y2 - 19 October 2025 through 23 October 2025

ER -

Wu Q, Chinnaiyan S, Rahman MD, Chen Y, Fraley J, Rowden B et al. Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers. In 2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025. Institute of Electrical and Electronics Engineers Inc. 2025. (2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025). doi: 10.1109/ECCE58356.2025.11259799

Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers

Abstract

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Keywords

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