Heteroepitaxial film silicon solar cell grown on Ni-W foils

Sung Hun Wee; Claudia Cantoni; Thomas R. Fanning; Charles W. Teplin; Daniela F. Bogorin; Jon Bornstein; Karen Bowers; Paul Schroeter; Falah Hasoon; Howard M. Branz; M. Parans Paranthaman; Amit Goyal

doi:10.1039/c2ee03350j

Heteroepitaxial film silicon solar cell grown on Ni-W foils

Sung Hun Wee, Claudia Cantoni, Thomas R. Fanning, Charles W. Teplin, Daniela F. Bogorin, Jon Bornstein, Karen Bowers, Paul Schroeter, Falah Hasoon, Howard M. Branz, M. Parans Paranthaman, Amit Goyal

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including ω-scans, φ-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.

Original language	English
Pages (from-to)	6052-6056
Number of pages	5
Journal	Energy and Environmental Science
Volume	5
Issue number	3
DOIs	https://doi.org/10.1039/c2ee03350j
State	Published - Mar 2012

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title = "Heteroepitaxial film silicon solar cell grown on Ni-W foils",

abstract = "Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including ω-scans, φ-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.",

author = "Wee, {Sung Hun} and Claudia Cantoni and Fanning, {Thomas R.} and Teplin, {Charles W.} and Bogorin, {Daniela F.} and Jon Bornstein and Karen Bowers and Paul Schroeter and Falah Hasoon and Branz, {Howard M.} and Paranthaman, {M. Parans} and Amit Goyal",

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doi = "10.1039/c2ee03350j",

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T1 - Heteroepitaxial film silicon solar cell grown on Ni-W foils

AU - Wee, Sung Hun

AU - Cantoni, Claudia

AU - Fanning, Thomas R.

AU - Teplin, Charles W.

AU - Bogorin, Daniela F.

AU - Bornstein, Jon

AU - Bowers, Karen

AU - Schroeter, Paul

AU - Hasoon, Falah

AU - Branz, Howard M.

AU - Paranthaman, M. Parans

AU - Goyal, Amit

PY - 2012/3

Y1 - 2012/3

N2 - Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including ω-scans, φ-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.

AB - Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including ω-scans, φ-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.

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Heteroepitaxial film silicon solar cell grown on Ni-W foils

Abstract

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