Helicity-Dependent Photovoltaic Effect in Bi2Se3 Under Normal Incident Light

Jean Besbas, Karan Banerjee, Jaesung Son, Yi Wang, Yang Wu, Matthew Brahlek, Nikesh Koirala, Jisoo Moon, Seongshik Oh, Hyunsoo Yang

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Topological insulators (TIs) form a new class of materials with an insulating bulk and conducting surfaces ensured by topologically protected surface states (TPSS). The impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3 is investigated. The observation of a helicity-dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity-dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.

Original languageEnglish
Pages (from-to)1642-1650
Number of pages9
JournalAdvanced Optical Materials
Volume4
Issue number10
DOIs
StatePublished - Oct 1 2016
Externally publishedYes

Keywords

  • BiSe
  • circular photogalvanic effect
  • photocurrent
  • photogalvanic effect
  • topological insulators

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