Heavy-ion damage to magnesium diboride films: Electrical transport-current characterization

H. R. Kerchner, C. Cantoni, M. Paranthaman, D. K. Christen, H. M. Christen, J. R. Thompson, D. J. Miller

Research output: Contribution to journalArticlepeer-review

Abstract

The use of magnesium diboride in superconducting magnets, transmission lines, or other large-scale applications depends on the transport-current characteristics of this material in magnetic field, and how they compare to the properties of conventional and high-temperature superconductors. Thin films of boron grown on sapphire substrates during electron-beam evaporation were exposed to Mg vapor to produce 0.5-μm thick layers of the metallic compound MgB2. Four-terminal measurements of their voltage-current relations, E(J), were carried out before and after exposure to Bø=1-T and higher doses of 1-Gev U ions. These doses lowered critical temperatures Tc≈39 K less than 0.1 degree, raised the normal-state resistivity, and reduced the loss-free critical current density, Jc. Higher doses added little. The reduction of current densities was greater in the presence of applied magnetic field greater than 0.1 T.

Original languageEnglish
Pages (from-to)133-138
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume689
StatePublished - 2002

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