Half-harmonic Kelvin probe force microscopy with transfer function correction

Senli Guo; Sergei V. Kalinin; Stephen Jesse

doi:10.1063/1.3684274

Half-harmonic Kelvin probe force microscopy with transfer function correction

Senli Guo, Sergei V. Kalinin, Stephen Jesse

Center for Nanophase Matls Sciences

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

An approach for surface potential imaging based on half-harmonic band excitation (BE) in Kelvin probe force microscopy is demonstrated. Using linear and half-harmonic BE enables quantitative correction of the cantilever transfer function. Half-harmonic band excitation Kelvin probe force microscopy (HBE KPFM) thus allows quantitative separation of surface potential and topographic contributions to the signal, obviating the primary sources of topographic cross-talk. HBE KPFM imaging and voltage spectroscopy methods are illustrated for several model systems.

Original language	English
Article number	063118
Journal	Applied Physics Letters
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.3684274
State	Published - Feb 6 2012

Funding

This research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.

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10.1063/1.3684274

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Half-harmonic Kelvin probe force microscopy with transfer function correction

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