Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Hongping Zhao; Guangyu Liu; Xiao Hang Li; G. S. Huang; Jonathan D. Poplawsky; S. Tafon Penn; Volkmar Dierolf; Nelson Tansu

doi:10.1063/1.3204446

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Hongping Zhao
, Guangyu Liu
, Xiao Hang Li
, G. S. Huang
, Jonathan D. Poplawsky
, S. Tafon Penn
, Volkmar Dierolf
, Nelson Tansu

Research output: Contribution to journal › Article › peer-review

188 Scopus citations

Abstract

Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

Original language	English
Article number	061104
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3204446
State	Published - 2009
Externally published	Yes

Funding

The authors would like to acknowledge funding supports from U.S. Department of Energy (Grant No. DE-FC26-08NT01581) and U.S. National Science Foundation (Grant No. ECCS # 0701421).

Access to Document

10.1063/1.3204446

Cite this

@article{9970d9629b8d40809876d23c8ef6b024,

title = "Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile",

abstract = "Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.",

author = "Hongping Zhao and Guangyu Liu and Li, \{Xiao Hang\} and Huang, \{G. S.\} and Poplawsky, \{Jonathan D.\} and Penn, \{S. Tafon\} and Volkmar Dierolf and Nelson Tansu",

year = "2009",

doi = "10.1063/1.3204446",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Li, Xiao Hang

AU - Huang, G. S.

AU - Poplawsky, Jonathan D.

AU - Penn, S. Tafon

AU - Dierolf, Volkmar

AU - Tansu, Nelson

PY - 2009

Y1 - 2009

N2 - Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

AB - Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

UR - https://www.scopus.com/pages/publications/69049114017

U2 - 10.1063/1.3204446

DO - 10.1063/1.3204446

M3 - Article

AN - SCOPUS:69049114017

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061104

ER -

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this