Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Hongping Zhao; Guangyu Liu; Xiao Hang Li; G. S. Huang; Jonathan D. Poplawsky; S. Tafon Penn; Volkmar Dierolf; Nelson Tansu

doi:10.1063/1.3204446

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

Hongping Zhao, Guangyu Liu, Xiao Hang Li, G. S. Huang, Jonathan D. Poplawsky, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu

Research output: Contribution to journal › Article › peer-review

184 Scopus citations

Abstract

Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

Original language	English
Article number	061104
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3204446
State	Published - 2009
Externally published	Yes

Funding

The authors would like to acknowledge funding supports from U.S. Department of Energy (Grant No. DE-FC26-08NT01581) and U.S. National Science Foundation (Grant No. ECCS # 0701421).

Funders	Funder number
National Science Foundation
U.S. Department of Energy	DE-FC26-08NT01581

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title = "Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile",

abstract = "Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.",

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AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Li, Xiao Hang

AU - Huang, G. S.

AU - Poplawsky, Jonathan D.

AU - Penn, S. Tafon

AU - Dierolf, Volkmar

AU - Tansu, Nelson

PY - 2009

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AB - Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.

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ER -

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile

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