Growth, structure, and properties of uniformly a-axis oriented ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates

D. Hesse; H. N. Lee; N. D. Zakharov; U. Gösele

Growth, structure, and properties of uniformly a-axis oriented ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films on Si(100) substrates

D. Hesse, H. N. Lee, N. D. Zakharov, U. Gösele

Materials Science and Technology Div

Research output: Contribution to journal › Conference article › peer-review

Abstract

Uniformly a-axis-oriented, epitaxially twinned Bi_3.25La _0.75Ti₃O₁₂ (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates covered with very thin SrRuO₃ bottom electrodes. Using SrRuO ₃ bottom electrodes of a specific low thickness in combination with a relatively high growth rate and a high oxygen pressure, the volume fraction of the BLT (100) orientation, which is competing with the BLT (118) orientation, was increased up to 99%. In this way the growth of fully a-axis-oriented BLT epitaxial films was achieved, attaining a remanent polarization of 32 μC/cm². Initial fatigue experiments indicated hardly any fatigue after 10⁹ switching cycles.

Original language	English
Pages (from-to)	51-60
Number of pages	10
Journal	Materials Research Society Symposium - Proceedings
Volume	747
State	Published - 2003
Event	Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States Duration: Dec 2 2002 → Dec 4 2002

Cite this

@article{0612765491ce49708784b7e606aeb11e,

title = "Growth, structure, and properties of uniformly a-axis oriented ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates",

abstract = "Uniformly a-axis-oriented, epitaxially twinned Bi3.25La 0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates covered with very thin SrRuO3 bottom electrodes. Using SrRuO 3 bottom electrodes of a specific low thickness in combination with a relatively high growth rate and a high oxygen pressure, the volume fraction of the BLT (100) orientation, which is competing with the BLT (118) orientation, was increased up to 99\%. In this way the growth of fully a-axis-oriented BLT epitaxial films was achieved, attaining a remanent polarization of 32 μC/cm2. Initial fatigue experiments indicated hardly any fatigue after 109 switching cycles.",

author = "D. Hesse and Lee, \{H. N.\} and Zakharov, \{N. D.\} and U. G{\"o}sele",

year = "2003",

language = "English",

volume = "747",

pages = "51--60",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics ; Conference date: 02-12-2002 Through 04-12-2002",

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TY - JOUR

T1 - Growth, structure, and properties of uniformly a-axis oriented ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates

AU - Hesse, D.

AU - Lee, H. N.

AU - Zakharov, N. D.

AU - Gösele, U.

PY - 2003

Y1 - 2003

N2 - Uniformly a-axis-oriented, epitaxially twinned Bi3.25La 0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates covered with very thin SrRuO3 bottom electrodes. Using SrRuO 3 bottom electrodes of a specific low thickness in combination with a relatively high growth rate and a high oxygen pressure, the volume fraction of the BLT (100) orientation, which is competing with the BLT (118) orientation, was increased up to 99%. In this way the growth of fully a-axis-oriented BLT epitaxial films was achieved, attaining a remanent polarization of 32 μC/cm2. Initial fatigue experiments indicated hardly any fatigue after 109 switching cycles.

AB - Uniformly a-axis-oriented, epitaxially twinned Bi3.25La 0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates covered with very thin SrRuO3 bottom electrodes. Using SrRuO 3 bottom electrodes of a specific low thickness in combination with a relatively high growth rate and a high oxygen pressure, the volume fraction of the BLT (100) orientation, which is competing with the BLT (118) orientation, was increased up to 99%. In this way the growth of fully a-axis-oriented BLT epitaxial films was achieved, attaining a remanent polarization of 32 μC/cm2. Initial fatigue experiments indicated hardly any fatigue after 109 switching cycles.

UR - https://www.scopus.com/pages/publications/0042520868

M3 - Conference article

AN - SCOPUS:0042520868

SN - 0272-9172

VL - 747

SP - 51

EP - 60

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics

Y2 - 2 December 2002 through 4 December 2002

ER -

Growth, structure, and properties of uniformly a-axis oriented ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films on Si(100) substrates

Abstract

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