Growth phases of ZnTe on GaSb(100)

G. E. Franklin; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.46.3940

Growth phases of ZnTe on GaSb(100)

G. E. Franklin, T. Miller, T. C. Chiang

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Abstract

Synchrotron-radiation photoemission was used to study the high- and low-temperature growth phases of ZnTe on GaSb(100). The deconvoluted core-level line shapes were used to construct structural models for the interface between these two compound semiconductors. In addition, the movement of the valence band and Fermi level was used to examine the heterojunction band offset for the low-temperature phase and the dopant incorporation for the high-temperature phase.

Original language	English
Pages (from-to)	3940-3947
Number of pages	8
Journal	Physical Review B
Volume	46
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.46.3940
State	Published - 1992
Externally published	Yes

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10.1103/PhysRevB.46.3940

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title = "Growth phases of ZnTe on GaSb(100)",

abstract = "Synchrotron-radiation photoemission was used to study the high- and low-temperature growth phases of ZnTe on GaSb(100). The deconvoluted core-level line shapes were used to construct structural models for the interface between these two compound semiconductors. In addition, the movement of the valence band and Fermi level was used to examine the heterojunction band offset for the low-temperature phase and the dopant incorporation for the high-temperature phase.",

author = "Franklin, {G. E.} and T. Miller and Chiang, {T. C.}",

year = "1992",

doi = "10.1103/PhysRevB.46.3940",

language = "English",

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AU - Franklin, G. E.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1992

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N2 - Synchrotron-radiation photoemission was used to study the high- and low-temperature growth phases of ZnTe on GaSb(100). The deconvoluted core-level line shapes were used to construct structural models for the interface between these two compound semiconductors. In addition, the movement of the valence band and Fermi level was used to examine the heterojunction band offset for the low-temperature phase and the dopant incorporation for the high-temperature phase.

AB - Synchrotron-radiation photoemission was used to study the high- and low-temperature growth phases of ZnTe on GaSb(100). The deconvoluted core-level line shapes were used to construct structural models for the interface between these two compound semiconductors. In addition, the movement of the valence band and Fermi level was used to examine the heterojunction band offset for the low-temperature phase and the dopant incorporation for the high-temperature phase.

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U2 - 10.1103/PhysRevB.46.3940

DO - 10.1103/PhysRevB.46.3940

M3 - Article

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JO - Physical Review B

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Growth phases of ZnTe on GaSb(100)

Abstract

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