Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates

Ho Nyung Lee; Dietrich Hesse; Nikolai Zakharov; Sung Kyun Lee; Ulrich Gösele

doi:10.1063/1.1565513

Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates

Ho Nyung Lee, Dietrich Hesse, Nikolai Zakharov, Sung Kyun Lee, Ulrich Gösele

Materials Science and Technology Div

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Pulsed laser deposition was used for the growth of uniformly a-axis-oriented, epitaxially twinned La-substituted Bi₄Ti₃O₁₂ (BLT) films. The volume fraction of the BLT (100) orientation was increased up to 99% using SrRuO₃ bottom electrodes of a specific low thickness in combination with a high growth rate and a high oxygen pressure. The growth of fully a-axis-oriented BLT films was achieved, attaining a remanent polarization.

Original language	English
Pages (from-to)	5592-5601
Number of pages	10
Journal	Journal of Applied Physics
Volume	93
Issue number	9
DOIs	https://doi.org/10.1063/1.1565513
State	Published - May 1 2003

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abstract = "Pulsed laser deposition was used for the growth of uniformly a-axis-oriented, epitaxially twinned La-substituted Bi4Ti3O12 (BLT) films. The volume fraction of the BLT (100) orientation was increased up to 99% using SrRuO3 bottom electrodes of a specific low thickness in combination with a high growth rate and a high oxygen pressure. The growth of fully a-axis-oriented BLT films was achieved, attaining a remanent polarization.",

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AU - Lee, Ho Nyung

AU - Hesse, Dietrich

AU - Zakharov, Nikolai

AU - Lee, Sung Kyun

AU - Gösele, Ulrich

PY - 2003/5/1

Y1 - 2003/5/1

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AB - Pulsed laser deposition was used for the growth of uniformly a-axis-oriented, epitaxially twinned La-substituted Bi4Ti3O12 (BLT) films. The volume fraction of the BLT (100) orientation was increased up to 99% using SrRuO3 bottom electrodes of a specific low thickness in combination with a high growth rate and a high oxygen pressure. The growth of fully a-axis-oriented BLT films was achieved, attaining a remanent polarization.

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Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates

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