TY - JOUR
T1 - Growth of SrVO3 thin films by hybrid molecular beam epitaxy
AU - Eaton, Craig
AU - Moyer, Jarrett A.
AU - Alipour, Hamideh M.
AU - Grimley, Everett D.
AU - Brahlek, Matthew
AU - Lebeau, James M.
AU - Engel-Herbert, Roman
N1 - Publisher Copyright:
© 2015 American Vacuum Society.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - The authors report the growth of stoichiometric SrVO3 thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO3 films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO3 thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.
AB - The authors report the growth of stoichiometric SrVO3 thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO3 films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO3 thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.
UR - http://www.scopus.com/inward/record.url?scp=84938308131&partnerID=8YFLogxK
U2 - 10.1116/1.4927439
DO - 10.1116/1.4927439
M3 - Article
AN - SCOPUS:84938308131
SN - 0734-2101
VL - 33
JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
IS - 6
M1 - 061504
ER -