Growth of rhombohedral B12P2 thin films on 6H-SiC (0001) by chemical vapor deposition

Peng Lu; J. H. Edgar; J. Pomeroy; M. Kuball; H. M. Meyer; T. Aselage

doi:10.1557/proc-799-z2.10

Growth of rhombohedral B₁₂P₂ thin films on 6H-SiC (0001) by chemical vapor deposition

Peng Lu, J. H. Edgar, J. Pomeroy, M. Kuball, H. M. Meyer, T. Aselage

Surface Chemistry & Catalysis Group

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The parameters necessary to deposit oriented rhombohedral boron phosphide (B₁₂P₂) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr ₃ and PBr₃ were used as reactants, with hydrogen as the carrier gas. The BBr₃ to PBr₃ flow rate ratio was adjusted to obtain good surface morphology of the B₁₂P₂films. BBr₃ to PBr₃ ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10μm/hr. Higher growth rates were obtained by increasing the BBr₃ flow rate, but the surfaces became very rough. The c-axis of the B₁₂P₂ film was aligned with the c-axis of the substrate at temperatures between 1650°C-1700°C. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.

Original language	English
Pages (from-to)	121-125
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	799
DOIs	https://doi.org/10.1557/proc-799-z2.10
State	Published - 2003
Event	Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

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title = "Growth of rhombohedral B12P2 thin films on 6H-SiC (0001) by chemical vapor deposition",

abstract = "The parameters necessary to deposit oriented rhombohedral boron phosphide (B12P2) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr 3 and PBr3 were used as reactants, with hydrogen as the carrier gas. The BBr3 to PBr3 flow rate ratio was adjusted to obtain good surface morphology of the B12P2films. BBr3 to PBr3 ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10μm/hr. Higher growth rates were obtained by increasing the BBr3 flow rate, but the surfaces became very rough. The c-axis of the B12P2 film was aligned with the c-axis of the substrate at temperatures between 1650°C-1700°C. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.",

author = "Peng Lu and Edgar, {J. H.} and J. Pomeroy and M. Kuball and Meyer, {H. M.} and T. Aselage",

year = "2003",

doi = "10.1557/proc-799-z2.10",

language = "English",

volume = "799",

pages = "121--125",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications ; Conference date: 01-12-2003 Through 04-12-2003",

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TY - JOUR

T1 - Growth of rhombohedral B12P2 thin films on 6H-SiC (0001) by chemical vapor deposition

AU - Lu, Peng

AU - Edgar, J. H.

AU - Pomeroy, J.

AU - Kuball, M.

AU - Meyer, H. M.

AU - Aselage, T.

PY - 2003

Y1 - 2003

N2 - The parameters necessary to deposit oriented rhombohedral boron phosphide (B12P2) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr 3 and PBr3 were used as reactants, with hydrogen as the carrier gas. The BBr3 to PBr3 flow rate ratio was adjusted to obtain good surface morphology of the B12P2films. BBr3 to PBr3 ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10μm/hr. Higher growth rates were obtained by increasing the BBr3 flow rate, but the surfaces became very rough. The c-axis of the B12P2 film was aligned with the c-axis of the substrate at temperatures between 1650°C-1700°C. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.

AB - The parameters necessary to deposit oriented rhombohedral boron phosphide (B12P2) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr 3 and PBr3 were used as reactants, with hydrogen as the carrier gas. The BBr3 to PBr3 flow rate ratio was adjusted to obtain good surface morphology of the B12P2films. BBr3 to PBr3 ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10μm/hr. Higher growth rates were obtained by increasing the BBr3 flow rate, but the surfaces became very rough. The c-axis of the B12P2 film was aligned with the c-axis of the substrate at temperatures between 1650°C-1700°C. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.

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U2 - 10.1557/proc-799-z2.10

DO - 10.1557/proc-799-z2.10

M3 - Conference article

AN - SCOPUS:3042597412

SN - 0272-9172

VL - 799

SP - 121

EP - 125

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications

Y2 - 1 December 2003 through 4 December 2003

ER -

Growth of rhombohedral B₁₂P₂ thin films on 6H-SiC (0001) by chemical vapor deposition

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