Growth of recrystallising grains in boron doped Ni76Al24

A. K. Jena; A. Shyam; M. C. Chaturvedi

doi:10.1179/026708399773002818

Growth of recrystallising grains in boron doped Ni₇₆Al₂₄

A. K. Jena, A. Shyam, M. C. Chaturvedi

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Abstract

Cold rolled boron doped Ni₇₆Al₂₄ was partially recrystallised at 850, 875, and 900°C. The recrystallised volume fraction and the interfacial area between recrystallised and unrecrystallised parts were determined as functions of time. The analysis of results showed the growth rates of recrystallised grains to be dependent on temperature, but independent of time. The activation energy for the transformation was 168 kJ mol^-1 and that for growth was 87 kJ mol^-1. The activation energy for growth was much less than that for diffusion and was dependent on the degree of cold working. This has been attributed to the strong interaction of boron with the structural defects produced by cold working.

Original language	English
Pages (from-to)	53-56
Number of pages	4
Journal	Materials Science and Technology (United Kingdom)
Volume	15
Issue number	1
DOIs	https://doi.org/10.1179/026708399773002818
State	Published - 1999
Externally published	Yes

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title = "Growth of recrystallising grains in boron doped Ni76Al24",

abstract = "Cold rolled boron doped Ni76Al24 was partially recrystallised at 850, 875, and 900°C. The recrystallised volume fraction and the interfacial area between recrystallised and unrecrystallised parts were determined as functions of time. The analysis of results showed the growth rates of recrystallised grains to be dependent on temperature, but independent of time. The activation energy for the transformation was 168 kJ mol-1 and that for growth was 87 kJ mol-1. The activation energy for growth was much less than that for diffusion and was dependent on the degree of cold working. This has been attributed to the strong interaction of boron with the structural defects produced by cold working.",

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AU - Jena, A. K.

AU - Shyam, A.

AU - Chaturvedi, M. C.

PY - 1999

Y1 - 1999

N2 - Cold rolled boron doped Ni76Al24 was partially recrystallised at 850, 875, and 900°C. The recrystallised volume fraction and the interfacial area between recrystallised and unrecrystallised parts were determined as functions of time. The analysis of results showed the growth rates of recrystallised grains to be dependent on temperature, but independent of time. The activation energy for the transformation was 168 kJ mol-1 and that for growth was 87 kJ mol-1. The activation energy for growth was much less than that for diffusion and was dependent on the degree of cold working. This has been attributed to the strong interaction of boron with the structural defects produced by cold working.

AB - Cold rolled boron doped Ni76Al24 was partially recrystallised at 850, 875, and 900°C. The recrystallised volume fraction and the interfacial area between recrystallised and unrecrystallised parts were determined as functions of time. The analysis of results showed the growth rates of recrystallised grains to be dependent on temperature, but independent of time. The activation energy for the transformation was 168 kJ mol-1 and that for growth was 87 kJ mol-1. The activation energy for growth was much less than that for diffusion and was dependent on the degree of cold working. This has been attributed to the strong interaction of boron with the structural defects produced by cold working.

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DO - 10.1179/026708399773002818

M3 - Article

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SN - 0267-0836

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SP - 53

EP - 56

JO - Materials Science and Technology (United Kingdom)

JF - Materials Science and Technology (United Kingdom)

IS - 1

ER -

Growth of recrystallising grains in boron doped Ni₇₆Al₂₄

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