Growth of oxide seed layers on Ni and other technologically interesting metal substrates: Issues related to formation and control of sulfur superstructures for texture optimization

C. Cantoni, D. K. Christen, A. Goyal, L. Heatherly, F. A. List, G. W. Ownby, D. M. Zehner, H. M. Christen, C. M. Rouleau

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations

Abstract

The current carrying capabilities of RABiTS are connected to the crystalline quality of the seed buffer layer and the stability of the metal/seed layer interface. Our study shows that the epitaxial growth of commonly used seed layers on textured Ni is mediated by a sulfur superstructure present on the metal surface. Many structural defects generated during seed layer growth (secondary orientations, in-plane rotation, incomplete cube texture) can be related to the S surface concentration and superstructure coverage. More generally, our results indicate that the epitaxial deposition of several classes of oxides (fluorite, perovskite, RE2O3) on several {100} 〈100〉 fcc metals depends, in addition to chemical stability and lattice match, on the existence and optimization of S superstructures on the metal surface. On these bases, we discuss issues related to the growth of different oxides on Ni, Ni-alloys, and Pd surfaces having different chemical and structural properties.

Original languageEnglish
Pages (from-to)2646-2650
Number of pages5
JournalIEEE Transactions on Applied Superconductivity
Volume13
Issue number2 III
DOIs
StatePublished - Jun 2003
Event2002 Applied Superconductivity Conference - Houston, TX, United States
Duration: Aug 4 2002Aug 9 2002

Funding

Manuscript received August 8, 2002. This paper was supported in part by the U.S. Department of Energy under Contract DE-AC05-00OR22725 and in part by the Oak Ridge National Laboratory, managed by UT-Battelle, LLC. The authors are with the Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/TASC.2003.811936

FundersFunder number
U.S. Department of EnergyDE-AC05-00OR22725
Oak Ridge National Laboratory
UT-Battelle

    Keywords

    • Buffer layers
    • Coated conductors
    • Epitaxial films
    • Metal surface

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