Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

Min Suk Oh; Sang Ho Kim; Tae Yeon Seong

doi:10.1063/1.2056576

Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

Min Suk Oh, Sang Ho Kim, Tae Yeon Seong

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69 Scopus citations

Abstract

We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

Original language	English
Article number	122103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.2056576
State	Published - Sep 19 2005
Externally published	Yes

Funding

This work was in part supported by the U.S. Air force Office of Scientific Research (AFOSR)/Asian Office of Aerospace Research & Development (AOARD).

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10.1063/1.2056576

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title = "Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition",

abstract = "We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.",

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N2 - We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

AB - We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

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Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

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