Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices

Derrick S.H. Liu, Maria Hilse, Andrew R. Lupini, Joan M. Redwing, Roman Engel-Herbert

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Fingerprint

Dive into the research topics of 'Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices'. Together they form a unique fingerprint.

Material Science