Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

Kartik Venkataraman; Eric E. Hellstrom; Mariappan Paranthaman

doi:10.1109/TASC.2005.848702

Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

Kartik Venkataraman
, Eric E. Hellstrom
, Mariappan Paranthaman

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Perovskite LaMnO₃ (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H₂, P_H2O ∼ 2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.

Original language	English
Pages (from-to)	3005-3008
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART III
DOIs	https://doi.org/10.1109/TASC.2005.848702
State	Published - Jun 2005

Funding

Manuscript received October 5, 2004. Work at the University of Wisconsin-Madison was supported in part by the U.S. Department of Energy under award DE-FC07-03ID14508. Work performed at Oak Ridge National Laboratory was supported by the U.S. Department of Energy, Office of Electric Transmission and Distribution. Oak Ridge National Laboratory is managed by U.T.-Battelle, LLC for the USDOE under contract DE-AC05-00OR22725.

Keywords

Chemical solution deposition
Coated conductor
LMO
Lanthanum manganate
Metal substrate

Access to Document

10.1109/TASC.2005.848702

Cite this

@article{2bc0ddb0280c4db39a29bd5421d2afb2,

title = "Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process",

abstract = "Perovskite LaMnO3 (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4\% H2, PH2O ∼ 2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.",

keywords = "Chemical solution deposition, Coated conductor, LMO, Lanthanum manganate, Metal substrate",

author = "Kartik Venkataraman and Hellstrom, \{Eric E.\} and Mariappan Paranthaman",

year = "2005",

month = jun,

doi = "10.1109/TASC.2005.848702",

language = "English",

volume = "15",

pages = "3005--3008",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2 PART III",

}

TY - JOUR

T1 - Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

AU - Venkataraman, Kartik

AU - Hellstrom, Eric E.

AU - Paranthaman, Mariappan

PY - 2005/6

Y1 - 2005/6

N2 - Perovskite LaMnO3 (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H2, PH2O ∼ 2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.

AB - Perovskite LaMnO3 (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H2, PH2O ∼ 2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.

KW - Chemical solution deposition

KW - Coated conductor

KW - LMO

KW - Lanthanum manganate

KW - Metal substrate

UR - https://www.scopus.com/pages/publications/22044439442

U2 - 10.1109/TASC.2005.848702

DO - 10.1109/TASC.2005.848702

M3 - Article

AN - SCOPUS:22044439442

SN - 1051-8223

VL - 15

SP - 3005

EP - 3008

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 2 PART III

ER -

Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this