Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

Kartik Venkataraman; Eric E. Hellstrom; Mariappan Paranthaman

doi:10.1109/TASC.2005.848702

Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

Kartik Venkataraman, Eric E. Hellstrom, Mariappan Paranthaman

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Perovskite LaMnO₃ (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H₂, P_H2O ∼ 2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.

Original language	English
Pages (from-to)	3005-3008
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART III
DOIs	https://doi.org/10.1109/TASC.2005.848702
State	Published - Jun 2005

Funding

Manuscript received October 5, 2004. Work at the University of Wisconsin-Madison was supported in part by the U.S. Department of Energy under award DE-FC07-03ID14508. Work performed at Oak Ridge National Laboratory was supported by the U.S. Department of Energy, Office of Electric Transmission and Distribution. Oak Ridge National Laboratory is managed by U.T.-Battelle, LLC for the USDOE under contract DE-AC05-00OR22725.

Funders	Funder number
Office of Electric Transmission and Distribution
U.S. Department of Energy	DE-FC07-03ID14508

Keywords

Chemical solution deposition
Coated conductor
LMO
Lanthanum manganate
Metal substrate

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abstract = "Perovskite LaMnO3 (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H2, PH2O ∼ 2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.",

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AB - Perovskite LaMnO3 (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H2, PH2O ∼ 2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.

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Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

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