Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen

C. M. Rouleau; D. H. Lowndes; J. W. McCamy; J. D. Budai; D. B. Poker; D. B. Geohegan; A. A. Puretzky; S. Zhu

doi:10.1063/1.114453

Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen

C. M. Rouleau, D. H. Lowndes, J. W. McCamy, J. D. Budai, D. B. Poker, D. B. Geohegan, A. A. Puretzky, S. Zhu

Functional Hybrid Nanomaterials

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Abstract

Highly N-doped (mid-10¹⁹ to >10²⁰ cm^-3) ZnTe/(001)GaAs epitaxial films have been grown by pulsed laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N₂ ambient (50 to 200 mTorr) without the use of any assisting dc or ac plasma source. Unlike recent experiments in which atomic N, extracted from dc and rf plasma sources, was used to produce N-doping during molecular beam epitaxy, spectroscopic measurements performed during PLA of ZnTe in N₂ do not reveal the presence of atomic N. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new mechanism, possibly energetic beam-induced reactions with excited N₂ adsorbed on the film surface, and/or transient formation of Zn-N complexes in the energetic ablation plume.

Original language	English
Pages (from-to)	2545
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114453
State	Published - 1995

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title = "Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen",

abstract = "Highly N-doped (mid-1019 to >1020 cm-3) ZnTe/(001)GaAs epitaxial films have been grown by pulsed laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N2 ambient (50 to 200 mTorr) without the use of any assisting dc or ac plasma source. Unlike recent experiments in which atomic N, extracted from dc and rf plasma sources, was used to produce N-doping during molecular beam epitaxy, spectroscopic measurements performed during PLA of ZnTe in N2 do not reveal the presence of atomic N. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new mechanism, possibly energetic beam-induced reactions with excited N2 adsorbed on the film surface, and/or transient formation of Zn-N complexes in the energetic ablation plume.",

author = "Rouleau, {C. M.} and Lowndes, {D. H.} and McCamy, {J. W.} and Budai, {J. D.} and Poker, {D. B.} and Geohegan, {D. B.} and Puretzky, {A. A.} and S. Zhu",

year = "1995",

doi = "10.1063/1.114453",

language = "English",

volume = "67",

pages = "2545",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen

AU - Rouleau, C. M.

AU - Lowndes, D. H.

AU - McCamy, J. W.

AU - Budai, J. D.

AU - Poker, D. B.

AU - Geohegan, D. B.

AU - Puretzky, A. A.

AU - Zhu, S.

PY - 1995

Y1 - 1995

N2 - Highly N-doped (mid-1019 to >1020 cm-3) ZnTe/(001)GaAs epitaxial films have been grown by pulsed laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N2 ambient (50 to 200 mTorr) without the use of any assisting dc or ac plasma source. Unlike recent experiments in which atomic N, extracted from dc and rf plasma sources, was used to produce N-doping during molecular beam epitaxy, spectroscopic measurements performed during PLA of ZnTe in N2 do not reveal the presence of atomic N. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new mechanism, possibly energetic beam-induced reactions with excited N2 adsorbed on the film surface, and/or transient formation of Zn-N complexes in the energetic ablation plume.

AB - Highly N-doped (mid-1019 to >1020 cm-3) ZnTe/(001)GaAs epitaxial films have been grown by pulsed laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N2 ambient (50 to 200 mTorr) without the use of any assisting dc or ac plasma source. Unlike recent experiments in which atomic N, extracted from dc and rf plasma sources, was used to produce N-doping during molecular beam epitaxy, spectroscopic measurements performed during PLA of ZnTe in N2 do not reveal the presence of atomic N. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new mechanism, possibly energetic beam-induced reactions with excited N2 adsorbed on the film surface, and/or transient formation of Zn-N complexes in the energetic ablation plume.

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U2 - 10.1063/1.114453

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen

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