Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates

Yunyan Zhang; Martin Aagesen; Ana M. Sanchez; Jiang Wu; Richard Beanland; Thomas Ward; Dongyoung Kim; Pamela Jurczak; Suguo Huo; Huiyun Liu

doi:10.1117/12.2210983

Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates

Yunyan Zhang, Martin Aagesen, Ana M. Sanchez, Jiang Wu, Richard Beanland, Thomas Ward, Dongyoung Kim, Pamela Jurczak, Suguo Huo, Huiyun Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Self-catalyzed GaAsP nanowires (NWs) have a band gap that is capable of covering the working wavelengths from green to infrared. However, the difficulties in controlling P and the complexities of the growth of ternary NWs make it challenging to fabricate them. In this work, self-catalyzed GaAsP NWs were successfully grown on Si substrates by solid-source molecular beam epitaxy and demonstrated almost stacking fault free zinc blend crystal structure, Growth of high-quality shell has been realized on the core NWs. In the shell, a quasi-3-fold composition symmetry has been observed for the first time. Moreover, these growth techniques have been successfully applied for growth on patterned Si substrates after some creative modifications such as high-temperature substrate cleaning and Ga pre-deposition. These results open up new perspectives for integrating IIÎ'V nanowire photovoltaics and visible light emitters on the silicon platform using self-catalyzed GaAsP corê'shell nanowires.

Original language	English
Title of host publication	Quantum Dots and Nanostructures
Subtitle of host publication	Growth, Characterization, and Modeling XIII
Editors	Diana L. Huffaker, Kimberly A. Dick, Holger Eisele
Publisher	SPIE
ISBN (Electronic)	9781628419931
DOIs	https://doi.org/10.1117/12.2210983
State	Published - 2016
Externally published	Yes
Event	Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII - San Francisco, United States Duration: Feb 15 2016 → Feb 16 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9758
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII
Country/Territory	United States
City	San Francisco
Period	02/15/16 → 02/16/16

Keywords

Core-shell
GaAsP
Nanowire
Self-catalyzed

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1117/12.2210983

Cite this

Zhang, Y., Aagesen, M., Sanchez, A. M., Wu, J., Beanland, R., Ward, T., Kim, D., Jurczak, P., Huo, S., & Liu, H. (2016). Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates. In D. L. Huffaker, K. A. Dick, & H. Eisele (Eds.), Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII Article 97580E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9758). SPIE. https://doi.org/10.1117/12.2210983

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title = "Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates",

abstract = "Self-catalyzed GaAsP nanowires (NWs) have a band gap that is capable of covering the working wavelengths from green to infrared. However, the difficulties in controlling P and the complexities of the growth of ternary NWs make it challenging to fabricate them. In this work, self-catalyzed GaAsP NWs were successfully grown on Si substrates by solid-source molecular beam epitaxy and demonstrated almost stacking fault free zinc blend crystal structure, Growth of high-quality shell has been realized on the core NWs. In the shell, a quasi-3-fold composition symmetry has been observed for the first time. Moreover, these growth techniques have been successfully applied for growth on patterned Si substrates after some creative modifications such as high-temperature substrate cleaning and Ga pre-deposition. These results open up new perspectives for integrating II{\^I}'V nanowire photovoltaics and visible light emitters on the silicon platform using self-catalyzed GaAsP cor{\^e}'shell nanowires.",

keywords = "Core-shell, GaAsP, Nanowire, Self-catalyzed",

author = "Yunyan Zhang and Martin Aagesen and Sanchez, {Ana M.} and Jiang Wu and Richard Beanland and Thomas Ward and Dongyoung Kim and Pamela Jurczak and Suguo Huo and Huiyun Liu",

note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII ; Conference date: 15-02-2016 Through 16-02-2016",

year = "2016",

doi = "10.1117/12.2210983",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Huffaker, {Diana L.} and Dick, {Kimberly A.} and Holger Eisele",

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}

Zhang, Y, Aagesen, M, Sanchez, AM, Wu, J, Beanland, R, Ward, T, Kim, D, Jurczak, P, Huo, S & Liu, H 2016, Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates. in DL Huffaker, KA Dick & H Eisele (eds), Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII., 97580E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9758, SPIE, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII, San Francisco, United States, 02/15/16. https://doi.org/10.1117/12.2210983

Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates. / Zhang, Yunyan; Aagesen, Martin; Sanchez, Ana M. et al.
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. ed. / Diana L. Huffaker; Kimberly A. Dick; Holger Eisele. SPIE, 2016. 97580E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9758).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Zhang, Yunyan

AU - Aagesen, Martin

AU - Sanchez, Ana M.

AU - Wu, Jiang

AU - Beanland, Richard

AU - Ward, Thomas

AU - Kim, Dongyoung

AU - Jurczak, Pamela

AU - Huo, Suguo

AU - Liu, Huiyun

PY - 2016

Y1 - 2016

N2 - Self-catalyzed GaAsP nanowires (NWs) have a band gap that is capable of covering the working wavelengths from green to infrared. However, the difficulties in controlling P and the complexities of the growth of ternary NWs make it challenging to fabricate them. In this work, self-catalyzed GaAsP NWs were successfully grown on Si substrates by solid-source molecular beam epitaxy and demonstrated almost stacking fault free zinc blend crystal structure, Growth of high-quality shell has been realized on the core NWs. In the shell, a quasi-3-fold composition symmetry has been observed for the first time. Moreover, these growth techniques have been successfully applied for growth on patterned Si substrates after some creative modifications such as high-temperature substrate cleaning and Ga pre-deposition. These results open up new perspectives for integrating IIÎ'V nanowire photovoltaics and visible light emitters on the silicon platform using self-catalyzed GaAsP corê'shell nanowires.

AB - Self-catalyzed GaAsP nanowires (NWs) have a band gap that is capable of covering the working wavelengths from green to infrared. However, the difficulties in controlling P and the complexities of the growth of ternary NWs make it challenging to fabricate them. In this work, self-catalyzed GaAsP NWs were successfully grown on Si substrates by solid-source molecular beam epitaxy and demonstrated almost stacking fault free zinc blend crystal structure, Growth of high-quality shell has been realized on the core NWs. In the shell, a quasi-3-fold composition symmetry has been observed for the first time. Moreover, these growth techniques have been successfully applied for growth on patterned Si substrates after some creative modifications such as high-temperature substrate cleaning and Ga pre-deposition. These results open up new perspectives for integrating IIÎ'V nanowire photovoltaics and visible light emitters on the silicon platform using self-catalyzed GaAsP corê'shell nanowires.

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M3 - Conference contribution

AN - SCOPUS:84987623776

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Quantum Dots and Nanostructures

A2 - Huffaker, Diana L.

A2 - Dick, Kimberly A.

A2 - Eisele, Holger

PB - SPIE

T2 - Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII

Y2 - 15 February 2016 through 16 February 2016

ER -

Zhang Y, Aagesen M, Sanchez AM, Wu J, Beanland R, Ward T et al. Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates. In Huffaker DL, Dick KA, Eisele H, editors, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. SPIE. 2016. 97580E. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2210983

Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates

Abstract

Publication series

Conference

Keywords

UN SDGs

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