Growth of high current density MgB2 films using ex-situ precursor approach

M. P. Paranthaman; D. K. Christen; H. M. Christen; J. R. Thompson; H. R. Kerchner; C. Cantoni; H. Y. Zhai

doi:10.1016/S0921-4534(02)01744-6

Growth of high current density MgB₂ films using ex-situ precursor approach

M. P. Paranthaman, D. K. Christen, H. M. Christen, J. R. Thompson, H. R. Kerchner, C. Cantoni, H. Y. Zhai

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Superconducting MgB₂ films with T_c = 39.0 K were prepared using an ex-situ precursor approach. Precursor films of boron, ∼0.6 μm thick, were deposited onto Al₂O₃(102) substrates by electron beam evaporation; subsequent post-anneal at 890 °C in the presence of MgB₂ and Mg metal produced highly crystalline MgB₂ films. Detailed X-ray diffraction studies indicate that the film is polycrystalline with some degree of c-axis texture. A transport J_c of over 4 × 10⁶ A/cm² was obtained on MgB₂ films at 25 K and self-field. The higher irreversibility fields, B_irr obtained from the transport measurements on MgB₂ films indicate that there is some improvement in flux pinning at lower temperatures. The details of the film growth and transport property measurements are reported.

Original language	English
Pages (from-to)	1252-1255
Number of pages	4
Journal	Physica C: Superconductivity and its Applications
Volume	378-381
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0921-4534(02)01744-6
State	Published - Oct 2002

Funding

Thanks are due to Pam Fleming for evaporating the B films. This work was supported by the US Department of Energy, Division of Materials Sciences, Office of Science, and the Office of Power Technologies––Superconductivity Program, Office of Energy Efficiency and Renewable Energy. The research was performed at the Oak Ridge National Laboratory, managed by U.T.-Battelle, LLC for the USDOE under contract DE-AC05-00OR22725.

Funders	Funder number
Division of Materials Sciences
Office of Power Technologies
U.S. Department of Energy
Office of Science
Office of Energy Efficiency and Renewable Energy

Keywords

AlO substrates
E-beam evaporation
MgB films
Transport properties

Access to Document

10.1016/S0921-4534(02)01744-6

Cite this

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title = "Growth of high current density MgB2 films using ex-situ precursor approach",

abstract = "Superconducting MgB2 films with Tc = 39.0 K were prepared using an ex-situ precursor approach. Precursor films of boron, ∼0.6 μm thick, were deposited onto Al2O3(102) substrates by electron beam evaporation; subsequent post-anneal at 890 °C in the presence of MgB2 and Mg metal produced highly crystalline MgB2 films. Detailed X-ray diffraction studies indicate that the film is polycrystalline with some degree of c-axis texture. A transport Jc of over 4 × 106 A/cm2 was obtained on MgB2 films at 25 K and self-field. The higher irreversibility fields, Birr obtained from the transport measurements on MgB2 films indicate that there is some improvement in flux pinning at lower temperatures. The details of the film growth and transport property measurements are reported.",

keywords = "AlO substrates, E-beam evaporation, MgB films, Transport properties",

author = "Paranthaman, {M. P.} and Christen, {D. K.} and Christen, {H. M.} and Thompson, {J. R.} and Kerchner, {H. R.} and C. Cantoni and Zhai, {H. Y.}",

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T1 - Growth of high current density MgB2 films using ex-situ precursor approach

AU - Paranthaman, M. P.

AU - Christen, D. K.

AU - Christen, H. M.

AU - Thompson, J. R.

AU - Kerchner, H. R.

AU - Cantoni, C.

AU - Zhai, H. Y.

PY - 2002/10

Y1 - 2002/10

N2 - Superconducting MgB2 films with Tc = 39.0 K were prepared using an ex-situ precursor approach. Precursor films of boron, ∼0.6 μm thick, were deposited onto Al2O3(102) substrates by electron beam evaporation; subsequent post-anneal at 890 °C in the presence of MgB2 and Mg metal produced highly crystalline MgB2 films. Detailed X-ray diffraction studies indicate that the film is polycrystalline with some degree of c-axis texture. A transport Jc of over 4 × 106 A/cm2 was obtained on MgB2 films at 25 K and self-field. The higher irreversibility fields, Birr obtained from the transport measurements on MgB2 films indicate that there is some improvement in flux pinning at lower temperatures. The details of the film growth and transport property measurements are reported.

AB - Superconducting MgB2 films with Tc = 39.0 K were prepared using an ex-situ precursor approach. Precursor films of boron, ∼0.6 μm thick, were deposited onto Al2O3(102) substrates by electron beam evaporation; subsequent post-anneal at 890 °C in the presence of MgB2 and Mg metal produced highly crystalline MgB2 films. Detailed X-ray diffraction studies indicate that the film is polycrystalline with some degree of c-axis texture. A transport Jc of over 4 × 106 A/cm2 was obtained on MgB2 films at 25 K and self-field. The higher irreversibility fields, Birr obtained from the transport measurements on MgB2 films indicate that there is some improvement in flux pinning at lower temperatures. The details of the film growth and transport property measurements are reported.

KW - AlO substrates

KW - E-beam evaporation

KW - MgB films

KW - Transport properties

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