Growth of Cr- and Co-doped CdSe crystals from high-temperature selenium solutions

O. O. Adetunji; N. Roy; Y. Cui; G. Wright; J. O. Ndap; A. Burger

doi:10.1007/s11664-002-0238-9

Growth of Cr- and Co-doped CdSe crystals from high-temperature selenium solutions

O. O. Adetunji, N. Roy, Y. Cui, G. Wright, J. O. Ndap, A. Burger

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Transition metals in the group II-VI semiconductors have attracted considerable attention for their application as tunable mid-infrared (IR) lasers at room temperature. Very recently, Co-doped II-VI hosts have been considered as saturable absorber materials. In the present study, we have grown both Cr-doped and Co-doped CdSe by a high-temperature solution growth technique using Se as solvent. The Cr-doped CdSe was grown in 4, 000-ppm concentration. The Codoped CdSe crystals were grown in concentrations of 2, 000 ppm and 4, 000 ppm. The crystals were characterized by optical-absorption spectroscopy. The absorption-peak position for Cr was 1.92 μm, and for Co, the peak position was 1.8 μm. The doping concentrations for Cr-doped samples were estimated from optical-absorption spectra using the Beer-Lambert law. Good-quality, crackfree single crystals were grown; however, our near-IR transmission microscopy showed Se inclusions, which were also confirmed by differential scanning calorimetry (DSC). The electrical-resistivity dependence on doping concentrations is presented and discussed. Glow discharge mass spectrometric (GDMS) measurements for the Co-doped sample are reported. The absorption cross section for Co was calculated for the first time using the Beer-Lambert law.

Original language	English
Article number	238
Pages (from-to)	795-798
Number of pages	4
Journal	Journal of Electronic Materials
Volume	31
Issue number	7
DOIs	https://doi.org/10.1007/s11664-002-0238-9
State	Published - 2002
Externally published	Yes

Funding

The authors acknowledge the support of NASA through the Center for Photonic Materials and Devices under NASA Grant No. NCC5-286, and Dr. Kennedy Reed for his support through the Research Collaborations Program for HBCU/MIs under Grant No. DE-FG03-94SF20368 and NSF Grant Nos. DMR0097272 and EHR-0090526. The summer student intern acknowledges the support of NSF and the REU program through Grant No. DUE-9987224.

Funders	Funder number
Center for Photonic Materials and Devices	DE-FG03-94SF20368, NCC5-286
National Science Foundation	DUE-9987224, DMR0097272, EHR-0090526
National Aeronautics and Space Administration

Keywords

Beer-Lambert law
Electrical resistivity
Glow discharge mass spectrometric (GDMS)
II-VI semiconductor
Mid-infrared solid-state laser
Optical transmission

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10.1007/s11664-002-0238-9

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title = "Growth of Cr- and Co-doped CdSe crystals from high-temperature selenium solutions",

abstract = "Transition metals in the group II-VI semiconductors have attracted considerable attention for their application as tunable mid-infrared (IR) lasers at room temperature. Very recently, Co-doped II-VI hosts have been considered as saturable absorber materials. In the present study, we have grown both Cr-doped and Co-doped CdSe by a high-temperature solution growth technique using Se as solvent. The Cr-doped CdSe was grown in 4, 000-ppm concentration. The Codoped CdSe crystals were grown in concentrations of 2, 000 ppm and 4, 000 ppm. The crystals were characterized by optical-absorption spectroscopy. The absorption-peak position for Cr was 1.92 μm, and for Co, the peak position was 1.8 μm. The doping concentrations for Cr-doped samples were estimated from optical-absorption spectra using the Beer-Lambert law. Good-quality, crackfree single crystals were grown; however, our near-IR transmission microscopy showed Se inclusions, which were also confirmed by differential scanning calorimetry (DSC). The electrical-resistivity dependence on doping concentrations is presented and discussed. Glow discharge mass spectrometric (GDMS) measurements for the Co-doped sample are reported. The absorption cross section for Co was calculated for the first time using the Beer-Lambert law.",

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author = "Adetunji, {O. O.} and N. Roy and Y. Cui and G. Wright and Ndap, {J. O.} and A. Burger",

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T1 - Growth of Cr- and Co-doped CdSe crystals from high-temperature selenium solutions

AU - Adetunji, O. O.

AU - Roy, N.

AU - Cui, Y.

AU - Wright, G.

AU - Ndap, J. O.

AU - Burger, A.

PY - 2002

Y1 - 2002

N2 - Transition metals in the group II-VI semiconductors have attracted considerable attention for their application as tunable mid-infrared (IR) lasers at room temperature. Very recently, Co-doped II-VI hosts have been considered as saturable absorber materials. In the present study, we have grown both Cr-doped and Co-doped CdSe by a high-temperature solution growth technique using Se as solvent. The Cr-doped CdSe was grown in 4, 000-ppm concentration. The Codoped CdSe crystals were grown in concentrations of 2, 000 ppm and 4, 000 ppm. The crystals were characterized by optical-absorption spectroscopy. The absorption-peak position for Cr was 1.92 μm, and for Co, the peak position was 1.8 μm. The doping concentrations for Cr-doped samples were estimated from optical-absorption spectra using the Beer-Lambert law. Good-quality, crackfree single crystals were grown; however, our near-IR transmission microscopy showed Se inclusions, which were also confirmed by differential scanning calorimetry (DSC). The electrical-resistivity dependence on doping concentrations is presented and discussed. Glow discharge mass spectrometric (GDMS) measurements for the Co-doped sample are reported. The absorption cross section for Co was calculated for the first time using the Beer-Lambert law.

AB - Transition metals in the group II-VI semiconductors have attracted considerable attention for their application as tunable mid-infrared (IR) lasers at room temperature. Very recently, Co-doped II-VI hosts have been considered as saturable absorber materials. In the present study, we have grown both Cr-doped and Co-doped CdSe by a high-temperature solution growth technique using Se as solvent. The Cr-doped CdSe was grown in 4, 000-ppm concentration. The Codoped CdSe crystals were grown in concentrations of 2, 000 ppm and 4, 000 ppm. The crystals were characterized by optical-absorption spectroscopy. The absorption-peak position for Cr was 1.92 μm, and for Co, the peak position was 1.8 μm. The doping concentrations for Cr-doped samples were estimated from optical-absorption spectra using the Beer-Lambert law. Good-quality, crackfree single crystals were grown; however, our near-IR transmission microscopy showed Se inclusions, which were also confirmed by differential scanning calorimetry (DSC). The electrical-resistivity dependence on doping concentrations is presented and discussed. Glow discharge mass spectrometric (GDMS) measurements for the Co-doped sample are reported. The absorption cross section for Co was calculated for the first time using the Beer-Lambert law.

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Growth of Cr- and Co-doped CdSe crystals from high-temperature selenium solutions

Abstract

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