Growth of (103) fiber-textured SrBi2Nb2O9 films on Pt-coated silicon

G. Asayama; J. Lettieri; M. A. Zurbuchen; Y. Jia; S. Trolier-Mckinstry; D. G. Schlom; S. K. Streiffer; J. P. Maria; S. D. Bu; C. B. Eom

doi:10.1063/1.1463697

Growth of (103) fiber-textured SrBi₂Nb₂O₉ films on Pt-coated silicon

G. Asayama, J. Lettieri, M. A. Zurbuchen, Y. Jia, S. Trolier-Mckinstry, D. G. Schlom, S. K. Streiffer, J. P. Maria, S. D. Bu, C. B. Eom

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Abstract

(103) fiber-textured SrBi₂Nb₂O₉ thin films have been grown on Pt-coated Si substrates using a SrRuO₃ buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) SrRuO₃ grains on (111) Pt grains and in turn (103) SrBi₂Nb₂O ₉ grains on (111) SrRuO₃ grains. The films exhibit remanent polarization values of 9 μC/cm². The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures.

Original language	English
Pages (from-to)	2371-2373
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	13
DOIs	https://doi.org/10.1063/1.1463697
State	Published - Apr 1 2002
Externally published	Yes

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title = "Growth of (103) fiber-textured SrBi2Nb2O9 films on Pt-coated silicon",

abstract = "(103) fiber-textured SrBi2Nb2O9 thin films have been grown on Pt-coated Si substrates using a SrRuO3 buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) SrRuO3 grains on (111) Pt grains and in turn (103) SrBi2Nb2O 9 grains on (111) SrRuO3 grains. The films exhibit remanent polarization values of 9 μC/cm2. The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures.",

author = "G. Asayama and J. Lettieri and Zurbuchen, \{M. A.\} and Y. Jia and S. Trolier-Mckinstry and Schlom, \{D. G.\} and Streiffer, \{S. K.\} and Maria, \{J. P.\} and Bu, \{S. D.\} and Eom, \{C. B.\}",

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doi = "10.1063/1.1463697",

language = "English",

volume = "80",

pages = "2371--2373",

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TY - JOUR

T1 - Growth of (103) fiber-textured SrBi2Nb2O9 films on Pt-coated silicon

AU - Asayama, G.

AU - Lettieri, J.

AU - Zurbuchen, M. A.

AU - Jia, Y.

AU - Trolier-Mckinstry, S.

AU - Schlom, D. G.

AU - Streiffer, S. K.

AU - Maria, J. P.

AU - Bu, S. D.

AU - Eom, C. B.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - (103) fiber-textured SrBi2Nb2O9 thin films have been grown on Pt-coated Si substrates using a SrRuO3 buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) SrRuO3 grains on (111) Pt grains and in turn (103) SrBi2Nb2O 9 grains on (111) SrRuO3 grains. The films exhibit remanent polarization values of 9 μC/cm2. The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures.

AB - (103) fiber-textured SrBi2Nb2O9 thin films have been grown on Pt-coated Si substrates using a SrRuO3 buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) SrRuO3 grains on (111) Pt grains and in turn (103) SrBi2Nb2O 9 grains on (111) SrRuO3 grains. The films exhibit remanent polarization values of 9 μC/cm2. The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures.

UR - https://www.scopus.com/pages/publications/79956016446

U2 - 10.1063/1.1463697

DO - 10.1063/1.1463697

M3 - Article

AN - SCOPUS:79956016446

SN - 0003-6951

VL - 80

SP - 2371

EP - 2373

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Growth of (103) fiber-textured SrBi₂Nb₂O₉ films on Pt-coated silicon

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