Growth mechanism of superconducting MgB2 films prepared by various methods

H. Y. Zhai; H. M. Christen; L. Zhang; M. Paranthaman; C. Cantoni; B. C. Sales; P. H. Fleming; D. K. Christen; D. H. Lowndes

doi:10.1557/JMR.2001.0375

Growth mechanism of superconducting MgB₂ films prepared by various methods

H. Y. Zhai, H. M. Christen, L. Zhang, M. Paranthaman, C. Cantoni, B. C. Sales, P. H. Fleming, D. K. Christen, D. H. Lowndes

Nanomaterials Chemistry Group

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Abstract

The growth mechanisms of MgB₂ films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with T_c0 ∼ 38.8 K and those from in situ anneal with T_c0 ∼ 24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB₂ grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the T_c0 down to 24 K.

Original language	English
Pages (from-to)	2759-2762
Number of pages	4
Journal	Journal of Materials Research
Volume	16
Issue number	10
DOIs	https://doi.org/10.1557/JMR.2001.0375
State	Published - Oct 2001

Funding

The authors thank D.P. Norton and C. Rouleau for technical assistance and useful discussions. This research is sponsored by the U.S. Department of Energy under Contract DE-AC05-00OR22735 with the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, and by the Department of Energy Office of Energy Efficiency and Renewable Energy, Office of Power Technologies—Superconductivity Program.

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title = "Growth mechanism of superconducting MgB2 films prepared by various methods",

abstract = "The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with Tc0 ∼ 38.8 K and those from in situ anneal with Tc0 ∼ 24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the Tc0 down to 24 K.",

author = "Zhai, {H. Y.} and Christen, {H. M.} and L. Zhang and M. Paranthaman and C. Cantoni and Sales, {B. C.} and Fleming, {P. H.} and Christen, {D. K.} and Lowndes, {D. H.}",

year = "2001",

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doi = "10.1557/JMR.2001.0375",

language = "English",

volume = "16",

pages = "2759--2762",

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T1 - Growth mechanism of superconducting MgB2 films prepared by various methods

AU - Zhai, H. Y.

AU - Christen, H. M.

AU - Zhang, L.

AU - Paranthaman, M.

AU - Cantoni, C.

AU - Sales, B. C.

AU - Fleming, P. H.

AU - Christen, D. K.

AU - Lowndes, D. H.

PY - 2001/10

Y1 - 2001/10

N2 - The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with Tc0 ∼ 38.8 K and those from in situ anneal with Tc0 ∼ 24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the Tc0 down to 24 K.

AB - The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with Tc0 ∼ 38.8 K and those from in situ anneal with Tc0 ∼ 24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the Tc0 down to 24 K.

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DO - 10.1557/JMR.2001.0375

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Growth mechanism of superconducting MgB₂ films prepared by various methods

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