Growth diagram and magnetic properties of hexagonal LuFe 2O 4 thin films

Wenbin Wang; Zheng Gai; Miaofang Chi; Jason D. Fowlkes; Jieyu Yi; Leyi Zhu; Xuemei Cheng; David J. Keavney; Paul C. Snijders; Thomas Z. Ward; Jian Shen; Xiaoshan Xu

doi:10.1103/PhysRevB.85.155411

Growth diagram and magnetic properties of hexagonal LuFe ₂O ₄ thin films

Wenbin Wang
, Zheng Gai
, Miaofang Chi
, Jason D. Fowlkes
, Jieyu Yi
, Leyi Zhu
, Xuemei Cheng
, David J. Keavney
, Paul C. Snijders
, Thomas Z. Ward
, Jian Shen
, Xiaoshan Xu

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe ₂O ₄ phase can only be grown in a small range of temperature and O ₂ pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in the LuFe ₂O ₄ film and is explained in terms of the effect of the impurity hexagonal LuFeO ₃ (h-LuFeO ₃) phase and structural defects.

Original language	English
Article number	155411
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	85
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.85.155411
State	Published - Apr 5 2012

Access to Document

10.1103/PhysRevB.85.155411

Cite this

@article{f5fb77ad5397451098207f86e78c4a8c,

title = "Growth diagram and magnetic properties of hexagonal LuFe 2O 4 thin films",

abstract = "A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe 2O 4 phase can only be grown in a small range of temperature and O 2 pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in the LuFe 2O 4 film and is explained in terms of the effect of the impurity hexagonal LuFeO 3 (h-LuFeO 3) phase and structural defects.",

author = "Wenbin Wang and Zheng Gai and Miaofang Chi and Fowlkes, \{Jason D.\} and Jieyu Yi and Leyi Zhu and Xuemei Cheng and Keavney, \{David J.\} and Snijders, \{Paul C.\} and Ward, \{Thomas Z.\} and Jian Shen and Xiaoshan Xu",

year = "2012",

month = apr,

day = "5",

doi = "10.1103/PhysRevB.85.155411",

language = "English",

volume = "85",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

TY - JOUR

T1 - Growth diagram and magnetic properties of hexagonal LuFe 2O 4 thin films

AU - Wang, Wenbin

AU - Gai, Zheng

AU - Chi, Miaofang

AU - Fowlkes, Jason D.

AU - Yi, Jieyu

AU - Zhu, Leyi

AU - Cheng, Xuemei

AU - Keavney, David J.

AU - Snijders, Paul C.

AU - Ward, Thomas Z.

AU - Shen, Jian

AU - Xu, Xiaoshan

PY - 2012/4/5

Y1 - 2012/4/5

N2 - A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe 2O 4 phase can only be grown in a small range of temperature and O 2 pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in the LuFe 2O 4 film and is explained in terms of the effect of the impurity hexagonal LuFeO 3 (h-LuFeO 3) phase and structural defects.

AB - A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe 2O 4 phase can only be grown in a small range of temperature and O 2 pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in the LuFe 2O 4 film and is explained in terms of the effect of the impurity hexagonal LuFeO 3 (h-LuFeO 3) phase and structural defects.

UR - https://www.scopus.com/pages/publications/84860263937

U2 - 10.1103/PhysRevB.85.155411

DO - 10.1103/PhysRevB.85.155411

M3 - Article

AN - SCOPUS:84860263937

SN - 1098-0121

VL - 85

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 155411

ER -

Growth diagram and magnetic properties of hexagonal LuFe ₂O ₄ thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this