Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

D. Lubben; G. Eres; G. E. Jellison; R. D. Westbrook; R. F. Wood

doi:10.1063/1.120194

Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

D. Lubben, G. Eres, G. E. Jellison, R. D. Westbrook, R. F. Wood

Quantum Heterostructures

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Abstract

Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si₂H₆ in H₂. Doping was accomplished from the background using PH₃ for n-type and B₂H₆ for p-type. The dopant concentration was controlled over four orders of magnitude (10¹⁵-10¹⁹ cm^-2) for films deposited between 650 and 800°C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si₂H₆ throughput in the same reactor. Even without optimization, solar cells constructed from these films had open-circuit voltages and short-circuit currents as high as 490 mV and 21 mA cm^-2, respectively, with fill factors as high as 70%.

Original language	English
Pages (from-to)	2812-2814
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	19
DOIs	https://doi.org/10.1063/1.120194
State	Published - Nov 10 1997

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title = "Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication",

abstract = "Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was controlled over four orders of magnitude (1015-1019 cm-2) for films deposited between 650 and 800°C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si2H6 throughput in the same reactor. Even without optimization, solar cells constructed from these films had open-circuit voltages and short-circuit currents as high as 490 mV and 21 mA cm-2, respectively, with fill factors as high as 70%.",

author = "D. Lubben and G. Eres and Jellison, {G. E.} and Westbrook, {R. D.} and Wood, {R. F.}",

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T1 - Growth and doping of Si layers by molecular-jet chemical vapor deposition

T2 - Device fabrication

AU - Lubben, D.

AU - Eres, G.

AU - Jellison, G. E.

AU - Westbrook, R. D.

AU - Wood, R. F.

PY - 1997/11/10

Y1 - 1997/11/10

N2 - Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was controlled over four orders of magnitude (1015-1019 cm-2) for films deposited between 650 and 800°C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si2H6 throughput in the same reactor. Even without optimization, solar cells constructed from these films had open-circuit voltages and short-circuit currents as high as 490 mV and 21 mA cm-2, respectively, with fill factors as high as 70%.

AB - Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was controlled over four orders of magnitude (1015-1019 cm-2) for films deposited between 650 and 800°C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si2H6 throughput in the same reactor. Even without optimization, solar cells constructed from these films had open-circuit voltages and short-circuit currents as high as 490 mV and 21 mA cm-2, respectively, with fill factors as high as 70%.

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Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

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