Growth and characterization of single quantum dots emitting at 1300 nm

B. Alloing; C. Zinoni; V. Zwiller; L. H. Li; C. Monat; M. Gobet; G. Buchs; A. Fiore; E. Pelucchi; E. Kapon

doi:10.1063/1.1872213

Growth and characterization of single quantum dots emitting at 1300 nm

B. Alloing
, C. Zinoni
, V. Zwiller
, L. H. Li
, C. Monat
, M. Gobet
, G. Buchs
, A. Fiore
, E. Pelucchi
, E. Kapon

Research output: Contribution to journal › Article › peer-review

169 Scopus citations

Abstract

We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 MLs, to reduce the density to 2 dotsμ m2 and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAsGaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.

Original language	English
Article number	101908
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	10
DOIs	https://doi.org/10.1063/1.1872213
State	Published - Mar 7 2005
Externally published	Yes

Funding

The authors are grateful to Roger Rochat for his invaluable technical contribution and the Swiss National Science Foundation (NCCR Quantum Photonics and ”Professeur boursier” program) for financial support.

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10.1063/1.1872213

Cite this

@article{ed7df505f0c14461b49532f5a47c0431,

title = "Growth and characterization of single quantum dots emitting at 1300 nm",

abstract = "We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 MLs, to reduce the density to 2 dotsμ m2 and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAsGaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.",

author = "B. Alloing and C. Zinoni and V. Zwiller and Li, \{L. H.\} and C. Monat and M. Gobet and G. Buchs and A. Fiore and E. Pelucchi and E. Kapon",

year = "2005",

month = mar,

day = "7",

doi = "10.1063/1.1872213",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Growth and characterization of single quantum dots emitting at 1300 nm

AU - Alloing, B.

AU - Zinoni, C.

AU - Zwiller, V.

AU - Li, L. H.

AU - Monat, C.

AU - Gobet, M.

AU - Buchs, G.

AU - Fiore, A.

AU - Pelucchi, E.

AU - Kapon, E.

PY - 2005/3/7

Y1 - 2005/3/7

N2 - We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 MLs, to reduce the density to 2 dotsμ m2 and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAsGaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.

AB - We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 MLs, to reduce the density to 2 dotsμ m2 and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAsGaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.

UR - https://www.scopus.com/pages/publications/17944379630

U2 - 10.1063/1.1872213

DO - 10.1063/1.1872213

M3 - Article

AN - SCOPUS:17944379630

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101908

ER -

Growth and characterization of single quantum dots emitting at 1300 nm

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