Abstract
We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 MLs, to reduce the density to 2 dotsμ m2 and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAsGaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.
Original language | English |
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Article number | 101908 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 10 |
DOIs | |
State | Published - Mar 7 2005 |
Externally published | Yes |
Funding
The authors are grateful to Roger Rochat for his invaluable technical contribution and the Swiss National Science Foundation (NCCR Quantum Photonics and ”Professeur boursier” program) for financial support.