Growth and characterization of single quantum dots emitting at 1300 nm

B. Alloing, C. Zinoni, V. Zwiller, L. H. Li, C. Monat, M. Gobet, G. Buchs, A. Fiore, E. Pelucchi, E. Kapon

Research output: Contribution to journalArticlepeer-review

159 Scopus citations

Abstract

We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 MLs, to reduce the density to 2 dotsμ m2 and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAsGaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.

Original languageEnglish
Article number101908
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
StatePublished - Mar 7 2005
Externally publishedYes

Funding

The authors are grateful to Roger Rochat for his invaluable technical contribution and the Swiss National Science Foundation (NCCR Quantum Photonics and ”Professeur boursier” program) for financial support.

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